Three-stage burst-mode transimpedance amplifier in deep-sub-/spl mu/m CMOS technology

2006 ◽  
Vol 53 (7) ◽  
pp. 1458-1467 ◽  
Author(s):  
K. Schneider ◽  
H. Zimmermann
Keyword(s):  
Cmos Technology ◽  
Transimpedance Amplifier ◽  
Burst Mode

scholarly journals A Tunable-Gain Transimpedance Amplifier for CMOS-MEMS Resonators Characterization

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 82
Author(s):  
Rafel Perelló-Roig ◽  
Jaume Verd ◽  
Sebastià Bota ◽  
Jaume Segura
Keyword(s):  
Cmos Technology ◽  
Open Loop ◽  
Transimpedance Amplifier ◽  
Mems Devices ◽  
Monolithically Integrated ◽  
Mems Resonators ◽  
Electromechanical Performance ◽  
Cmos Mems ◽  
Promising Solution ◽  
On Chip

CMOS-MEMS resonators have become a promising solution thanks to their miniaturization and on-chip integration capabilities. However, using a CMOS technology to fabricate microelectromechanical system (MEMS) devices limits the electromechanical performance otherwise achieved by specific technologies, requiring a challenging readout circuitry. This paper presents a transimpedance amplifier (TIA) fabricated using a commercial 0.35-µm CMOS technology specifically oriented to drive and sense monolithically integrated CMOS-MEMS resonators up to 50 MHz with a tunable transimpedance gain ranging from 112 dB to 121 dB. The output voltage noise is as low as 225 nV/Hz1/2—input-referred current noise of 192 fA/Hz1/2—at 10 MHz, and the power consumption is kept below 1-mW. In addition, the TIA amplifier exhibits an open-loop gain independent of the parasitic input capacitance—mostly associated with the MEMS layout—representing an advantage in MEMS testing compared to other alternatives such as Pierce oscillator schemes. The work presented includes the characterization of three types of MEMS resonators that have been fabricated and experimentally characterized both in open-loop and self-sustained configurations using the integrated TIA amplifier. The experimental characterization includes an accurate extraction of the electromechanical parameters for the three fabricated structures that enables an accurate MEMS-CMOS circuitry co-design.

scholarly journals A Current-Mode TransImpedance Amplifier for Capacitive Sensors

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1033
Author(s):  
Alessandro Nastro ◽  
Andrea De Marcellis ◽  
Marco Ferrari ◽  
Vittorio Ferrari
Keyword(s):  
Current Mode ◽  
Cmos Technology ◽  
Detection Sensitivity ◽  
Transimpedance Amplifier ◽  
Current Conveyors ◽  
Interface Circuit ◽  
Linear Behavior ◽  
Board Level ◽  
Voltage Conversion ◽  
A Current

A Current-Mode (CM) TransImpedance Amplifier (TIA) based on Second Generation Current Conveyors (CCIIs) for capacitive microsensor measurements is presented. The designed electronic interface performs a capacitance-to-voltage conversion using 3 CCIIs and 3 resistors exploiting a synchronous-demodulation technique to improve the overall detection sensitivity and resolution of the system. A CM-TIA solution designed at transistor level in AMS0.35 µm integrated CMOS technology with a power consumption lower than 900 µW is proposed. Experimental results obtained with a board-level prototype show linear behavior of the proposed interface circuit with a resolution up to 34.5 fF and a sensitivity up to 223 mV/nF, confirming the theoretical expectations.

10 Gb/s Burst-Mode Transimpedance Preamplifier in 0.13µm CMOS Technology

2012 ◽  
Vol 241-244 ◽  
pp. 2215-2220
Author(s):  
Gao Wei Gu ◽  
En Zhu
Keyword(s):  
Gain Control ◽  
Cmos Technology ◽  
Fast Response ◽  
High Gain ◽  
Settling Time ◽  
Output Buffer ◽  
Peak Detector ◽  
Burst Mode ◽  
Variable Gain ◽  
Response Peak

A 10Gbit/s burst-mode transimpedance preamplifier is described. Regulated cascade (RGC) TIA core with variable gain, fast response peak detector, single-to-differential and output buffer are included, providing auto-gain-control and threshold extraction functions. The burst-mode preamplifier is implemented by 0.13µm CMOS technology, presents a high gain of 67.9dB with a 3-dB bandwidth of 6.92GHz and a low gain of 57.4dB with a 3-dB bandwidth of 8.60GHz with a settling time less than 20ns.

scholarly journals RF Transimpedance Amplifier for CATV Applications over PON

2017 ◽  
Vol 5 ◽  
Author(s):  
Guillermo Royo ◽  
Carlos Sánchez-Azqueta ◽  
Concepción Aldea ◽  
Santiago Celma
Keyword(s):  
Communication Systems ◽  
Gain Control ◽  
Cmos Technology ◽  
Transimpedance Amplifier ◽  
Control Range ◽  
Fully Differential ◽  
Rf Signals ◽  
Input Range ◽  
Transimpedance Gain

In this work, we present a fully differential transimpedance amplifier (TIA) with controllable transimpedance for use in RF overlay downstream communication systems. The transimpedance amplifier has been designed in a standard 180-nm CMOS technology and it is intended for 47 MHz to 870 MHz subcarrier multiplexed RF signals. It performs a 18 dBΩ transimpedance gain control range for extended optical input range from -6 dBm up to +2 dBm.

scholarly journals A 33.6-to-33.8 Gb/s Burst-Mode CDR in 90 nm CMOS Technology

2009 ◽  
Vol 44 (3) ◽  
pp. 775-783 ◽  
Author(s):  
Lan-Chou Cho ◽  
Chihun Lee ◽  
Chao-Ching Hung ◽  
Shen-Iuan Liu
Keyword(s):  
Cmos Technology ◽  
Burst Mode
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