scholarly journals Clustered Loop Buffer Organization for Low Energy VLIW Embedded Processors

2005 ◽  
Vol 54 (6) ◽  
pp. 672-683 ◽  
Author(s):  
M. Jayapala ◽  
F. Barat ◽  
T.V. Aa ◽  
F. Catthoor ◽  
H. Corporaal ◽  
...  
Author(s):  
Tom Vander Aa ◽  
Murali Jayapala ◽  
Francisco Barat ◽  
Geert Deconinck ◽  
Rudy Lauwereins ◽  
...  

Author(s):  
A. Merentitis ◽  
N. Kranitis ◽  
A. Paschalis ◽  
D. Gizopoulos

2012 ◽  
Vol 9 (1) ◽  
pp. 86-100 ◽  
Author(s):  
A. Merentitis ◽  
N. Kranitis ◽  
A. Paschalis ◽  
D. Gizopoulos

Author(s):  
Libo Huang ◽  
Zhiying Wang ◽  
Li Shen ◽  
Hongyi Lu ◽  
Nong Xiao ◽  
...  

Author(s):  
Ittetsu Taniguchi ◽  
Murali Jayapala ◽  
Praveen Raghavan ◽  
Francky Catthoor ◽  
Keishi Sakanushi ◽  
...  

Author(s):  
A. Garg ◽  
W.A.T. Clark ◽  
J.P. Hirth

In the last twenty years, a significant amount of work has been done in the theoretical understanding of grain boundaries. The various proposed grain boundary models suggest the existence of coincidence site lattice (CSL) boundaries at specific misorientations where a periodic structure representing a local minimum of energy exists between the two crystals. In general, the boundary energy depends not only upon the density of CSL sites but also upon the boundary plane, so that different facets of the same boundary have different energy. Here we describe TEM observations of the dissociation of a Σ=27 boundary in silicon in order to reduce its surface energy and attain a low energy configuration.The boundary was identified as near CSL Σ=27 {255} having a misorientation of (38.7±0.2)°/[011] by standard Kikuchi pattern, electron diffraction and trace analysis techniques. Although the boundary appeared planar, in the TEM it was found to be dissociated in some regions into a Σ=3 {111} and a Σ=9 {122} boundary, as shown in Fig. 1.


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