Midwave Barrier Infrared Detector with Quantum Dot Enhancement

2014 ◽  
Author(s):  
David Z. Ting ◽  
Cory J. Hill ◽  
Alexander Soibel ◽  
Sam A. Keo ◽  
Jason M. Mumolo ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Infrared Detector

Enhancement in device performance of hepta-layer coupled InGaAs quantum dot infrared detector by AuGe surface plasmons

2016 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Lavi Tyagi ◽  
Hemant Ghadi ◽  
Harshal Rawool ◽  
Subhananda Chakrabarti
Keyword(s):  
Quantum Dot ◽  
Surface Plasmons ◽  
Infrared Detector ◽  
Device Performance

Quantum structures for multiband photon detection

2006 ◽  
Vol 14 (2) ◽  
Author(s):  
A. Perera
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Dark Current ◽  
Room Temperature ◽  
Dominant Role ◽  
Infrared Detector ◽  
Dual Band ◽  
Ultraviolet Region ◽  
Free Carrier Absorption ◽  
Internal Photoemission

AbstractThe work describes multiband photon detectors based on semiconductor micro-and nano-structures. The devices considered include quantum dot, homojunction, and heterojunction structures. In the quantum dot structures, transitions are from one state to another, while free carrier absorption and internal photoemission play the dominant role in homo or heterojunction detectors. Quantum dots-in-a-well (DWELL) detectors can tailor the response wavelength by varying the size of the well. A tunnelling quantum dot infrared photodetector (T-QDIP) could operate at room temperature by blocking the dark current except in the case of resonance. Photoexcited carriers are selectively collected from InGaAs quantum dots by resonant tunnelling, while the dark current is blocked by AlGaAs/InGaAs tunnelling barriers placed in the structure. A two-colour infrared detector with photoresponse peaks at ∼6 and ∼17 μm at room temperature will be discussed. A homojunction or heterojunction interfacial workfunction internal photoemission (HIWIP or HEIWIP) infrared detector, formed by a doped emitter layer, and an intrinsic layer acting as the barrier followed by another highly doped contact layer, can detect near infrared (NIR) photons due to interband transitions and mid/far infrared (MIR/FIR) radiation due to intraband transitions. The threshold wavelength of the interband response depends on the band gap of the barrier material, and the MIR/FIR response due to intraband transitions can be tailored by adjusting the band offset between the emitter and the barrier. GaAs/AlGaAs will provide NIR and MIR/FIR dual band response, and with GaN/AlGaN structures the detection capability can be extended into the ultraviolet region. These detectors are useful in numerous applications such as environmental monitoring, medical diagnosis, battlefield-imaging, space astronomy applications, mine detection, and remote-sensing.

Infrared detector based on modulation-doped quantum-dot structures

2006 ◽  
Vol 3 (11) ◽  
pp. 4013-4016 ◽  
Author(s):  
V. Mitin ◽  
N. Vagidov ◽  
A. Sergeev
Keyword(s):  
Quantum Dot ◽  
Infrared Detector

Utilization of self-assembled AuGe nanoparticles for improving performance of InGaAs/GaAs quantum dot infrared detector

2017 ◽  
Vol 28 (17) ◽  
pp. 12497-12502
Author(s):  
Sushil Kumar Pandey ◽  
Lavi Tyagi ◽  
Hemant Ghadi ◽  
Harshal Rawool ◽  
Subhananda Chakrabarti
Keyword(s):  
Quantum Dot ◽  
Infrared Detector ◽  
Self Assembled ◽  
Gaas Quantum Dot

Microanalysis of Self-assembled InAs Quantum Dot Structures Grown for Infrared Detector Applications

2003 ◽  
Vol 794 ◽  
Author(s):  
W.L. Sarney ◽  
J.W. Little ◽  
S. Svensson
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Infrared Detector ◽  
Single Layer ◽  
Far Infrared ◽  
Mbe Growth ◽  
Inas Quantum Dots ◽  
Gaas Matrix ◽  
Inas Quantum Dot ◽  
Vertical Height

ABSTRACTIn an effort to develop materials that are sensitive to mid and far infrared radiation, we examine InAs quantum dot/GaAs matrix multilayer structures grown by molecular beam epitaxy (MBE). Customized electrical and optical properties result from nanoscale-level manipulation of the dots' physical dimensions. The MBE growth temperature can be set to yield dots having the desired lateral dimension; however this leads to dots of insufficient vertical height. It is therefore necessary to grow the dots in a manner that allows independent control of the lateral and vertical dimensions. In this experiment, the vertical dimension is controlled by growing the dots in a multilayer structure with GaAs matrix layers. An initial layer of InAs quantum dots was grown on top of GaAs, followed by a few seconds short growth of GaAs, and then followed by the growth of another layer of InAs dots. The GaAs laterally surrounds, but does not bury, the InAs quantum dots. When the second layer of InAs dots is grown, they tend to self-organize directly on top of the exposed first layer of dots. We then grew a third layer of dots in the same manner. This effectively results in a pseudo-single layer of dots of the desired height which is then completely buried in GaAs. The goal is to develop structures that can be integrated into high operating temperature quantum dot infrared detectors (QDIPs) that have maximum sensitivity, robustness, and portability.

High operating temperature midwave quantum dot barrier infrared detector (QD-BIRD)

2012 ◽  
Author(s):  
David Z. Ting ◽  
Alexander Soibel ◽  
Cory J. Hill ◽  
Sam A. Keo ◽  
Jason M. Mumolo ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Operating Temperature ◽  
Infrared Detector ◽  
High Operating Temperature

Complementary barrier infrared detector (CBIRD) with double tunnel junction contact and quantum dot barrier infrared detector (QD-BIRD)

2013 ◽  
Vol 59 ◽  
pp. 146-151 ◽  
Author(s):  
David Z.-Y. Ting ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
Sam A. Keo ◽  
Jean Nguyen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Tunnel Junction ◽  
Infrared Detector

Interfacial properties of GaSb/InAs superlattices

1993 ◽  
Vol 51 ◽  
pp. 826-827
Author(s):  
M. E. Twigg ◽  
B. R. Bennett ◽  
J. R. Waterman ◽  
J. L. Davis ◽  
B. V. Shanabrook ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Molecular Beam ◽  
Infrared Detector ◽  
Interfacial Properties ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Absorption Coefficients ◽  
X Ray ◽  
Short Period ◽  
High Optical Absorption

Recently, the GaSb/InAs superlattice system has received renewed attention. The interest stems from a model demonstrating that short period Ga1-xInxSb/InAs superlattices will have both a band gap less than 100 meV and high optical absorption coefficients, principal requirements for infrared detector applications. Because this superlattice system contains two species of cations and anions, it is possible to prepare either InSb-like or GaAs-like interfaces. As such, the system presents a unique opportunity to examine interfacial properties.We used molecular beam epitaxy (MBE) to prepare an extensive set of GaSb/InAs superlattices grown on an GaSb buffer, which, in turn had been grown on a (100) GaAs substrate. Through appropriate shutter sequences, the interfaces were directed to assume either an InSb-like or GaAs-like character. These superlattices were then studied with a variety of ex-situ probes such as x-ray diffraction and Raman spectroscopy. These probes confirmed that, indeed, predominantly InSb-like and GaAs-like interfaces had been achieved.

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