Online electro-thermal model for real time junction temperature estimation for insulated gate bipolar transistor (IGBT)

2016 ◽  
Author(s):  
Mohamed Halick Mohamed Sathik ◽  
Tseng King Jet ◽  
Karthik Kandasamy ◽  
Sundararajan Prasanth ◽  
Rejeki Simanjorang ◽  
...  
Keyword(s):  
Real Time ◽  
Thermal Model ◽  
Bipolar Transistor ◽  
Junction Temperature ◽  
Temperature Estimation ◽  
Insulated Gate Bipolar Transistor

Transient junction temperature estimation of IGBT using improved thermal model

2018 ◽  
Vol 88-90 ◽  
pp. 1146-1150 ◽  
Author(s):  
Jingge Hu ◽  
Meng Huang ◽  
Yi Liu ◽  
Xiaoming Zha
Keyword(s):  
Thermal Model ◽  
Junction Temperature ◽  
Temperature Estimation

scholarly journals An Improved Electro-Thermal Model to Estimate the Junction Temperature of IGBT Module

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1066 ◽  
Author(s):  
Zhen Hu ◽  
Wenfeng Zhang ◽  
Juai Wu
Keyword(s):  
Thermal Model ◽  
Junction Temperature ◽  
Good Time ◽  
Model Parameters ◽  
Step Process ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Module ◽  
Solder Fatigue ◽  
Update Process ◽  
Key Parameter

Junction temperature is a key parameter that influences both the performance and the reliability of the insulated gate bipolar transistor (IGBT) module, while solder fatigue has a significant effect on the accuracy of junction temperature estimates using the electro-thermal model. In this paper, an improved electro-thermal model, which is independent of solder fatigue, is proposed to accurately estimate the junction temperature of IGBT module. Firstly, solder fatigue conditions are monitored in real time with the information of the case temperatures. Secondly, when solder fatigue is found, the update process of the electro-thermal model parameters is performed to match the model parameters with the fatigue device. With the above two-step process, the influence of solder fatigue on the accuracy of temperature estimates can be removed in good time. Experimental results are provided to validate the effectiveness of the proposed method.

Real Time Simulation of Insulated Gate Bipolar Transistor

2013 ◽  
Vol 299 ◽  
pp. 75-78 ◽  
Author(s):  
Xiao Jun Ma ◽  
Zong Min Yang ◽  
Chun Guang Liu ◽  
Yu Lin Yan
Keyword(s):  
Real Time ◽  
Interpolation Method ◽  
Bipolar Transistor ◽  
Switching Process ◽  
Real Time Simulation ◽  
The Real ◽  
Insulated Gate Bipolar Transistor ◽  
Time Simulation ◽  
Field Programmable ◽  
Voltage Spike

The voltage spike, current spike and power loss in switching process is important factors in reliability of insulated gate bipolar transistor (IGBT). The real time simulation of IGBT is studied in this paper, taking the basic cell of IGBT power electronic circuit as an example. The function model of IGBT for real time simulation is built by piecewise interpolation method, in which the parameters are get from the datasheet. The real time simulation of IGBT is realized in field programmable gate array (FPGA), and the results can reflect the key performances of switching process.

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