Post-RTA Effect on Electrical Characteristics of Nano-scale Strained Si Grown on SiGe-on-Insulator n-MOSFET

2006 ◽  
Author(s):  
Jea-gun Park ◽  
Tae-hun Shim ◽  
Gon-sub Lee ◽  
Won-ju Cho ◽  
Chang-geun Ahn
Keyword(s):  
Electrical Characteristics ◽  
Strained Si ◽  
Nano Scale

scholarly journals Effects of gamma-ray radiation on channel current of the uniaxial strained Si nano-scale NMOSFET

2017 ◽  
Vol 14 (19) ◽  
pp. 20170866-20170866 ◽  
Author(s):  
Minru Hao ◽  
Huiyong Hu ◽  
Chenguang Liao ◽  
Bin Wang
Keyword(s):  
Gamma Ray ◽  
Strained Si ◽  
Channel Current ◽  
Nano Scale

1503 Device simulation of electrical characteristics of nano-scale nMOSFETs taking account of local stress

2009 ◽  
Vol 2009.22 (0) ◽  
pp. 708-709
Author(s):  
Keisuke YOSHIDA ◽  
Masaaki KOGANEMARU ◽  
Toru IKEDA ◽  
Noriyuki MIYAZAKI ◽  
Hajime TOMOKAGE
Keyword(s):  
Device Simulation ◽  
Local Stress ◽  
Electrical Characteristics ◽  
Nano Scale

Post-RTA Effect on the Electrical Characteristics ofNano-Scale Strained Si Grown on SiGe-on-Insulator n-MOSFET

2007 ◽  
Vol 50 (2) ◽  
pp. 514 ◽  
Author(s):  
Seong-Je Seong-Je ◽  
Tae-Hun Tae-Hun ◽  
Jea-Gun Jea-Gun ◽  
Myung-Ho Myung-Ho ◽  
Won-Ju Won-Ju
Keyword(s):  
Electrical Characteristics ◽  
Strained Si
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