High-performance and low-voltage sense-amplifier techniques for sub-90nm SRAM

2004 ◽  
Author(s):  
M. Sinha ◽  
S. Hsu ◽  
A. Alvandpour ◽  
W. Burleson ◽  
R. Krishnamurthy ◽  
...  
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Sense Amplifier

A high-performance very low-voltage current sense amplifier for nonvolatile memories

2005 ◽  
Vol 40 (2) ◽  
pp. 507-514 ◽  
Author(s):  
A. Conte ◽  
G.L. Giudice ◽  
G. Palumbo ◽  
A. Signorello
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Sense Amplifier ◽  
Nonvolatile Memories

An Ultra-Low Power and High Performance Single Ended Sense Amplifier for Low Voltage Flash Memories

2018 ◽  
Vol 14 (1) ◽  
pp. 157-169 ◽  
Author(s):  
W. Steve Ngueya ◽  
Jean-Michel Portal ◽  
Hassen Aziza ◽  
Julien Mellier ◽  
Stephane Ricard
Keyword(s):  
Low Power ◽  
High Performance ◽  
Low Voltage ◽  
Flash Memories ◽  
Ultra Low Power ◽  
Sense Amplifier

A low-voltage sense amplifier for high-performance embedded flash memory

2010 ◽  
Vol 31 (10) ◽  
pp. 105001 ◽  
Author(s):  
Liu Jiang ◽  
Wang Xueqiang ◽  
Wang Qin ◽  
Wu Dong ◽  
Zhang Zhigang ◽  
...  
Keyword(s):  
Flash Memory ◽  
High Performance ◽  
Low Voltage ◽  
Sense Amplifier ◽  
Embedded Flash

Current State of Biological High-Resolution Scanning Electron Microscopy

1988 ◽  
Vol 46 ◽  
pp. 180-181 ◽  
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Backscattered Electrons ◽  
Lens Position ◽  
Low Voltage Operation ◽  
Signal Collection ◽  
Probe Size ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

A new generation of high performance field emission scanning electron microscopes (FSEM) is now commercially available (JEOL 890, Hitachi S 900, ISI OS 130-F) characterized by an "in lens" position of the specimen where probe diameters are reduced and signal collection improved. Additionally, low voltage operation is extended to 1 kV. Compared to the first generation of FSEM (JE0L JSM 30, Hitachi S 800), which utilized a specimen position below the final lens, specimen size had to be reduced but useful magnification could be impressively increased in both low (1-4 kV) and high (5-40 kV) voltage operation, i.e. from 50,000 to 200,000 and 250,000 to 1,000,000 x respectively.At high accelerating voltage and magnification, contrasts on biological specimens are well characterized1 and are produced by the entering probe electrons in the outmost surface layer within -vl nm depth. Backscattered electrons produce only a background signal. Under these conditions (FIG. 1) image quality is similar to conventional TEM (FIG. 2) and only limited at magnifications >1,000,000 x by probe size (0.5 nm) or non-localization effects (%0.5 nm).

Transient self back-biased buffer for low-voltage high-performance applications in standard CMOS technologies

1999 ◽  
Vol 35 (2) ◽  
pp. 112 ◽  
Author(s):  
Y. Moisiadis ◽  
I. Bouras ◽  
C. Papadas ◽  
J.-P. Schoellkopf
Keyword(s):  
High Performance ◽  
Low Voltage

A Low-Voltage High-Performance Frequency Divider exploiting Folded MCML

2021 ◽  
Author(s):  
Francesco Centurelli ◽  
Giuseppe Scotti ◽  
Alessandro Trifiletti ◽  
Gaetano Palumbo
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Frequency Divider

scholarly journals Reliability-Oriented Design of Inverter-Fed Low-Voltage Electrical Machines: Potential Solutions

Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4144
Author(s):  
Yatai Ji ◽  
Paolo Giangrande ◽  
Vincenzo Madonna ◽  
Weiduo Zhao ◽  
Michael Galea
Keyword(s):  
Power Density ◽  
High Speed ◽  
High Performance ◽  
Low Voltage ◽  
Electrical Machines ◽  
Design Stage ◽  
Switching Frequency ◽  
Special Focus ◽  
Electrical Machine ◽  
Engineering Approach

Transportation electrification has kept pushing low-voltage inverter-fed electrical machines to reach a higher power density while guaranteeing appropriate reliability levels. Methods commonly adopted to boost power density (i.e., higher current density, faster switching frequency for high speed, and higher DC link voltage) will unavoidably increase the stress to the insulation system which leads to a decrease in reliability. Thus, a trade-off is required between power density and reliability during the machine design. Currently, it is a challenging task to evaluate reliability during the design stage and the over-engineering approach is applied. To solve this problem, physics of failure (POF) is introduced and its feasibility for electrical machine (EM) design is discussed through reviewing past work on insulation investigation. Then the special focus is given to partial discharge (PD) whose occurrence means the end-of-life of low-voltage EMs. The PD-free design methodology based on understanding the physics of PD is presented to substitute the over-engineering approach. Finally, a comprehensive reliability-oriented design (ROD) approach adopting POF and PD-free design strategy is given as a potential solution for reliable and high-performance inverter-fed low-voltage EM design.

An Offset Reduction Technique for Latch Type Sense Amplifier in High Performance and High Density SRAM

2012 ◽  
Vol 542-543 ◽  
pp. 769-774
Author(s):  
Qun Ling Yu ◽  
Na Bai ◽  
Yan Zhou ◽  
Rui Xing Li ◽  
Jun Ning Chen ◽  
...  
Keyword(s):  
High Performance ◽  
Circuit Simulation ◽  
Cmos Technology ◽  
Optimal Operation ◽  
Reduction Technique ◽  
Total Speed ◽  
Sense Amplifier ◽  
Simulation Results ◽  
A New Technique ◽  
Total Energy Dissipation

A new technique for reducing the offset of latch-type sense amplifier has been proposed and effect of enable signal voltage upon latch-type sense amplifier offset in SRAM has been investigated in this paper. Circuit simulation results on both StrongARM and Double-tail topologies show that the standard deviation of offset can be reduced by 31.23% (StrongARM SA) and 25.2% (Double-tail SA) , respectively, when the voltage of enable signal reaches 0.6V in TSMC 65nm CMOS technology. For a column of bit-cell (1024 bit-cell), the total speed is improved by 14.98% (StrongARAM SA) and 22.26% (Double-tail SA) at the optimal operation point separately, and the total energy dissipation is reduced by 30.45% and 29.47% with this scheme.

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