Neutron and proton irradiation: effects on the active layer width and electric field distribution in semi-insulating GaAs Schottky diodes

2002 ◽  
Author(s):  
A. Castaldini ◽  
A. Cavallini ◽  
L. Polenta ◽  
C. Canali ◽  
F. Nava
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
Active Layer ◽  
Proton Irradiation ◽  
Electric Field Distribution ◽  
Schottky Diodes ◽  
Irradiation Effects ◽  
Layer Width

scholarly journals О защите высоковольтных мезаструктурных 4H-SiC-приборов от поверхностного пробоя: прямая фаска

2020 ◽  
Vol 54 (2) ◽  
pp. 207
Author(s):  
Н.М. Лебедева ◽  
Н.Д. Ильинская ◽  
П.А. Иванов
Keyword(s):  
Numerical Simulation ◽  
Silicon Carbide ◽  
Electric Field ◽  
Field Distribution ◽  
High Voltage ◽  
Electric Field Distribution ◽  
Schottky Diodes ◽  
Dry Etching ◽  
Edge Termination ◽  
Protection Method

Abstract The prospects for the protection of high-voltage 4 H -SiC-devices from edge breakdown via the formation of mesa structures with inclined walls (negative beveling) are considered. Numerical simulation of the spatial electric-field distribution in high-voltage (~1500V) reverse-biased mesa-epitaxial p ^+– p – n _0– n ^+ 4 H -SiC diodes is performed. It is shown that negative beveling with small angles of less than 10° from the plane of the p – n _0 junction makes it possible to reduce severalfold the surface edge electric field as compared to that in the bulk. A combined protection method is suggested as the edge-termination technique for 4 H -SiC diodes with a p ^+– n _0– n ^+ structure, Schottky diodes with an n _0 blocking base, and bipolar n ^+– p – n _0 transistors via the implantation of boron along with negative beveling. The possibility of fabricating mesa structures with inclined walls via the photolithography and dry etching of silicon carbide is briefly discussed.

Electric field distribution using floating metal guard rings edge-termination for Schottky diodes

2018 ◽  
Vol 82 ◽  
pp. 160-164 ◽  
Author(s):  
Khaled Driche ◽  
Sarah Rugen ◽  
Nando Kaminski ◽  
Hitoshi Umezawa ◽  
Hajime Okumura ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
Electric Field Distribution ◽  
Schottky Diodes ◽  
Edge Termination

Effect of Void Shape in Polymeric Insulator on the Electric Field Distribution

2017 ◽  
Vol 5 (3) ◽  
pp. 96
Author(s):  
I. Made Yulistya Negara ◽  
Dimas Anton Asfani ◽  
Daniar Fahmi ◽  
Yusrizal Afif
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
Electric Field Distribution ◽  
Void Shape

Tuning the Localized Surface Plasmon Resonance of Al-Al2O3 Nanosphere Towards NIR Region by Gold Coating

2020 ◽  
Vol 12 ◽  
Author(s):  
Jyoti Katyal ◽  
Shivani Gautam
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
Dielectric Layer ◽  
Electric Field Distribution ◽  
Active Material ◽  
Visible Region ◽  
Field Enhancement ◽  
Localized Surface Plasmon ◽  
Sers Substrate ◽  
Al Nanoparticles

Background: A relatively narrow LSPR peak and a strong inter band transition ranging around 800 nm makes Al strongly plasmonic active material. Usually, Al nanoparticles are preferred for UV-plasmonic as the SPR of small size Al nanoparticles locates in deep UV-UV region of the optical spectrum. This paper focused on tuning the LSPR of Al nanostructure towards infrared region by coating Au layer. The proposed structure has Au as outer layer which prevent the further oxidation of Al nanostructure. Methods: The Finite Difference Time Domain (FDTD) and Plasmon Hybridization Theory has been used to evaluated the LSPR and field enhancement of single and dimer Al-Al2O3-Au MDM nanostructure. Results: It is observed that the resonance mode show dependence on the thickness of Al2O3 layer and also on the composition of nanostructure. The Au layered MDM nanostructure shows two peak of equal intensities simultaneously in UV and visible region tuned to NIR region. The extinction spectra and electric field distribution profiles of dimer nanoparticles are compared with monomer to reveal the extent of coupling. The dimer configuration shows higher field enhancement ~107 at 1049 nm. By optimizing the thickness of dielectric layer the MDM nanostructure can be used over UV-visible-NIR region. Conclusion: The LSPR peak shows dependence on the thickness of dielectric layer and also on the composition of nanostructure. It has been observed that optimization of size and thickness of dielectric layer can provide two peaks of equal intensities in UV and Visible region which is advantageous for many applications. The electric field distribution profiles of dimer MDM nanostructure enhanced the field by ~107 in visible and NIR region shows its potential towards SERS substrate. The results of this study will provide valuable information for the optimization of LSPR of Al-Al2O3-Au MDM nanostructure to have high field enhancement.

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