Automatic End Point Detection of Plasma Etching Process Using the Multi-Way PCA of the Whole Optical Emission Spectrum

Author(s):  
Kyounghoon Han ◽  
Jae Lee ◽  
Heeyeop Chae ◽  
Kwang Han ◽  
Kun Park ◽  
...  
1991 ◽  
Vol 58 (3) ◽  
pp. 240-242 ◽  
Author(s):  
David Angell ◽  
Gottlieb S. Oehrlein

1997 ◽  
Vol 502 ◽  
Author(s):  
K. Min ◽  
J. J. Chambers ◽  
G. N. Parsons ◽  
J. R. Hauser

ABSTRACTSelective etch of SiO2/poly Si in a high density CF4+D2 plasma generated by ECR (Electron Cyclotron Resonance) system was studied. The end point detection of the SiO2 sidewall spacer etch was monitored using optical emission spectroscopy and mass spectrometer. SEM cross sectional analysis was conducted to confirm the end point detection and spacer formation.


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