scholarly journals Ultra-low power metal-oxide gas sensor on plastic foil

Author(s):  
J. Courbat ◽  
D. Briand ◽  
L. Yue ◽  
S. Raible ◽  
N.F. de Rooij
2020 ◽  
Vol 320 ◽  
pp. 128363 ◽  
Author(s):  
Florian Rasch ◽  
Vasile Postica ◽  
Fabian Schütt ◽  
Yogendra Kumar Mishra ◽  
Ali Shaygan Nia ◽  
...  

2009 ◽  
Author(s):  
Frank Röck ◽  
Nicolae Barsan ◽  
Udo Weimar ◽  
Matteo Pardo ◽  
Giorgio Sberveglieri

2014 ◽  
Vol 43 (1) ◽  
pp. 74-88 ◽  
Author(s):  
Kamarulzaman Kamarudin ◽  
Syed Muhammad Mamduh ◽  
Ali Yeon Md Shakaff ◽  
Shaharil Mad Saad ◽  
Ammar Zakaria ◽  
...  

2014 ◽  
pp. 1213-1253
Author(s):  
Jamal Mazloom ◽  
Farhad E. Ghodsi

This chapter provides a review of recent progress in gas sensor based on semiconducting metal oxide nanostructure. The response mechanism and development of various methods to enhancement of sensing properties receives the most attention. Theoretical models to explain the effects of morphology, additives, heterostructured composite and UV irradiation on response improvement were studied comprehensively. Investigations have indicated that 1D nanostructured metal oxide with unique geometry and physical properties display superior sensitivity to gas species. Also, the proposed conduction model in gas sensor based on 1D Metal oxide is discussed. Finally, the response mechanism of hierarchical and hollow nanostructures as novel sensing materials is addressed.


Micromachines ◽  
2020 ◽  
Vol 11 (2) ◽  
pp. 223 ◽  
Author(s):  
Yannan Zhang ◽  
Ke Han ◽  
and Jiawei Li

Ultra-low power and high-performance logical devices have been the driving force for the continued scaling of complementary metal oxide semiconductor field effect transistors which greatly enable electronic devices such as smart phones to be energy-efficient and portable. In the pursuit of smaller and faster devices, researchers and scientists have worked out a number of ways to further lower the leaking current of MOSFETs (Metal oxide semiconductor field effect transistor). Nanowire structure is now regarded as a promising candidate of future generation of logical devices due to its ultra-low off-state leaking current compares to FinFET. However, the potential of nanowire in terms of off-state current has not been fully discovered. In this article, a novel Core–Insulator Gate-All-Around (CIGAA) nanowire has been proposed, investigated, and simulated comprehensively and systematically based on 3D numerical simulation. Comparisons are carried out between GAA and CIGAA. The new CIGAA structure exhibits low off-state current compares to that of GAA, making it a suitable candidate of future low-power and energy-efficient devices.


2020 ◽  
Vol MA2020-01 (28) ◽  
pp. 2153-2153
Author(s):  
Binayak Ojha ◽  
Divyashree Narayana ◽  
Margarita Aleksandrova ◽  
Heinz Kohler ◽  
Matthias Schwotzer ◽  
...  

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