Metal contact capacitive switch on low-resistivity silicon wafer

2005 ◽  
Author(s):  
Q.X. Zhang ◽  
A.B. Yu ◽  
A.Q. Liu
Keyword(s):  
Silicon Wafer ◽  
Metal Contact ◽  
Capacitive Switch ◽  
Low Resistivity

Micromachined DC contact capacitive switch on low-resistivity silicon substrate

2006 ◽  
Vol 127 (1) ◽  
pp. 24-30 ◽  
Author(s):  
A.B. Yu ◽  
A.Q. Liu ◽  
Q.X. Zhang ◽  
A. Alphones ◽  
H.M. Hosseini
Keyword(s):  
Silicon Substrate ◽  
Capacitive Switch ◽  
Low Resistivity

Determination of metal contact recombination parameters for silicon wafer solar cells by photoluminescence imaging

Solar Energy ◽  
2015 ◽  
Vol 118 ◽  
pp. 20-27 ◽  
Author(s):  
Vinodh Shanmugam ◽  
Thomas Mueller ◽  
Armin G. Aberle ◽  
Johnson Wong
Keyword(s):  
Solar Cells ◽  
Silicon Wafer ◽  
Metal Contact

Low-loss microwave coplanar waveguides realized on low-resistivity silicon wafer

2004 ◽  
Author(s):  
Yuping Ge ◽  
Fangmin Guo ◽  
Weiming Wang ◽  
Shaoxin Yu ◽  
Li Shao ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Coplanar Waveguides ◽  
Low Loss ◽  
Low Resistivity

Impact of the phosphorus emitter doping profile on metal contact recombination of silicon wafer solar cells

2016 ◽  
Vol 147 ◽  
pp. 171-176 ◽  
Author(s):  
Vinodh Shanmugam ◽  
Ankit Khanna ◽  
Prabir K. Basu ◽  
Armin G. Aberle ◽  
Thomas Mueller ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Wafer ◽  
Doping Profile ◽  
Metal Contact

Fabrication of Nanostructures of Low-Resistivity Silicon Wafer with High-Aspect-Ratio Using Carbon Nanotube Probe of Scanning Tunneling Microscope

2013 ◽  
Vol 1527 ◽  
Author(s):  
Akihito Matsumuro ◽  
Makoto Takagi
Keyword(s):  
Carbon Nanotube ◽  
Aspect Ratio ◽  
Silicon Wafer ◽  
Bias Voltage ◽  
High Aspect Ratio ◽  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Formation Mechanisms ◽  
Tunneling Microscope ◽  
Low Resistivity

ABSTRACTVarious nanostructures with high-aspect-ratio formed in a low-resistivity silicon wafer by the nano-processing using a carbon nanotube (CNT) probe of a scanning tunneling microscope (STM) have been investigated. The multi-wall CNT probes were obtained with our original pulling-method from CNT dispersion liquid. Nanostructures of point configurations (pit and mound) and line configurations were obtained at the constant tunneling current of 0.1 nA by controlling the bias voltages up to 10 V, processing times up to 300 s and scanning speeds of probe up to 480 nm/s for a line configuration. The aspect-ratio of the pit configuration fabricated at the bias voltage of 3 V increased about 6 times in proportion to the increase in processing time. Remarkable influence of the bias voltage on the configurations indicated that there exists a threshold bias voltage for the transition from the pit configuration to the mound one between 3 V and 5 V, and the aspect ratio of all nanostructures fabricated by the CNT probe were larger than those by a conventional tungsten probe. Finally, cross-sectional TEM observations were also applied to clarify the difference in the formation mechanisms between the pit configuration and the mound configuration. The TEM image of the pit configuration showed neither dislocations nor remarkable strains existed, but in the case of the mound shape TEM analysis indicated the existence of single crystalline silicon region solidified with atomic defects under the mound configuration. Therefore the drastic change of the configurations was attributed to the changes of the atomic-scale microstructures by applying the bias voltages.

VERY LOW RESISTIVITY AuMn GATE OHMIC CONTACTS FOR GaInAs DIFFUSED JFETs

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-453-C4-456 ◽  
Author(s):  
P. E. HALLALI ◽  
P. BLANCONNIER ◽  
L. BRICARD ◽  
J-C. RENAUD
Keyword(s):  
Ohmic Contacts ◽  
Low Resistivity

Integration of Multi-geophysical Approaches to Identify Potential Pathways of Heavy Metals Contamination - A Case Study in Zeida, Morocco

2020 ◽  
Vol 25 (3) ◽  
pp. 415-423
Author(s):  
Ahmed Lachhab ◽  
El Mehdi Benyassine ◽  
Mohamed Rouai ◽  
Abdelilah Dekayir ◽  
Jean C. Parisot ◽  
...  
Keyword(s):  
Heavy Metals ◽  
Seismic Velocity ◽  
Seismic Refraction ◽  
Geophysical Methods ◽  
Low Frequency ◽  
Electrical Current ◽  
P Wave ◽  
Low Resistivity ◽  
Refraction Tomography ◽  
Geophysical Surveys

The tailings of Zeida's abandoned mine are found near the city of Midelt, in the middle of the high Moulouya watershed between the Middle and the High Atlas of Morocco. The tailings occupy an area of about 100 ha and are stored either in large mining pit lakes with clay-marl substratum or directly on a heavily fractured granite bedrock. The high contents of lead and arsenic in these tailings have transformed them into sources of pollution that disperse by wind, runoff, and seepage to the aquifer through faults and fractures. In this work, the main goal is to identify the pathways of contaminated water with heavy metals and arsenic to the local aquifers, water ponds, and Moulouya River. For this reason, geophysical surveys including electrical resistivity tomography (ERT), seismic refraction tomography (SRT) and very low-frequency electromagnetic (VLF-EM) methods were carried out over the tailings, and directly on the substratum outside the tailings. The result obtained from combining these methods has shown that pollutants were funneled through fractures, faults, and subsurface paleochannels and contaminated the hydrological system connecting groundwater, ponds, and the river. The ERT profiles have successfully shown the location of fractures, some of which extend throughout the upper formation to depths reaching the granite. The ERT was not successful in identifying fractures directly beneath the tailings due to their low resistivity which inhibits electrical current from propagating deeper. The seismic refraction surveys have provided valuable details on the local geology, and clearly identified the thickness of the tailings and explicitly marked the boundary between the Triassic formation and the granite. It also aided in the identification of paleochannels. The tailings materials were easily identified by both their low resistivity and low P-wave velocity values. Also, both resistivity and seismic velocity values rapidly increased beneath the tailings due to the compaction of the material and lack of moisture and have proven to be effective in identifying the upper limit of the granite. Faults were found to lie along the bottom of paleochannels, which suggest that the locations of these channels were caused by these same faults. The VLF-EM surveys have shown tilt angle anomalies over fractured areas which were also evinced by low resistivity area in ERT profiles. Finally, this study showed that the three geophysical methods were complementary and in good agreement in revealing the pathways of contamination from the tailings to the local aquifer, nearby ponds and Moulouya River.

Development of Silicon Wafer Packaging Technology for Deep UV LED

2020 ◽  
Vol 140 (7) ◽  
pp. 152-157
Author(s):  
Hirofumi Chiba ◽  
Yukio Suzuki ◽  
Yoshiaki Yasuda ◽  
Mitsuyasu Kumagai ◽  
Takaaki Koyama ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Packaging Technology ◽  
Uv Led ◽  
Deep Uv
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