JavaMonte: a new programming language for Monte Carlo simulation

2002 ◽  
Author(s):  
R.C. Garcia ◽  
R.J. LeBlanc ◽  
M. Sadiku
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Programming Language

Calculation of roc curves in multidimensional likelihood ratio based screening with Down's syndrome as a special case

1998 ◽  
Vol 5 (2) ◽  
pp. 57-62 ◽  
Author(s):  
S O Larsen ◽  
M Christiansen ◽  
B Nørgaard-Pedersen
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Programming Language ◽  
A Priori ◽  
Roc Curves ◽  
Likelihood Ratios ◽  
Screening Performance ◽  
Log Likelihood ◽  
Special Knowledge ◽  
Special Case

Objectives The development of algorithms and computer programs for the analysis of screening performance in situations with multiple normally (Gaussian) distributed selection markers and a priori risks depending on a stratification of the population. Methods The S-PLUS programming language was used to construct programs producing distributions of log likelihood ratios based on the Monte Carlo simulation. These distributions were used to construct programs for the calculation of roc curves, including a possible stratification of the population. Results S-PLUS programs for the analysis of screening performance are listed and described. The programs can be used without any special knowledge of S-PLUS. An example of the use of the programs is given.

scholarly journals Corrigendum to ``Descriptive Measures of Poisson-Lomax Distribution''

2020 ◽  
Vol 43 (2) ◽  
pp. 345-353
Author(s):  
Khushnoor Khan
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Probability Distribution ◽  
Programming Language ◽  
Numerical Results ◽  
Due Diligence ◽  
Mean Values ◽  
Lomax Distribution ◽  
Mathematical Properties ◽  
The Mean

This corrigendum focuses on the correction of numerical results derived from Poisson-Lomax Distribution (PLD) originally proposed by Al-Zahrani & Sagor (2014). Though the mathematical properties and derivations by Al-Zahrani & Sagor (2014) were immaculate but during the execution ofthe R codes using Monte Carlo simulation some anomalies occurred in the calculation of the mean values. The same  anomalies are addressed in thepresent corrigendum. The outcome of the corrigendum will provide basic guidelines for the academia and reviewers of various journals to match thenumerical results with the shape of the probability distribution under study. The results will also emphasize the fact that code writing is a cumbersome process and due diligence be exercised in executing the codes using any programming language. Relevant R codes are appended in Appendix 'A'.

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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