The Micomputer In A Research Environment: Application To Real-time Process Control

2005 ◽  
Author(s):  
G. Brinkworth ◽  
J. Lowry ◽  
A. Bailey ◽  
R. Schafer
Keyword(s):  
Process Control ◽  
Real Time ◽  
Time Process ◽  
Research Environment

Knowledge-based systems for real-time process control: The MIP project

1992 ◽  
Vol 17 ◽  
pp. 391-396
Author(s):  
X. Alamán ◽  
S. Romero ◽  
C. Aguirre ◽  
P. Serrahima ◽  
R. Muñoz ◽  
...  
Keyword(s):  
Process Control ◽  
Real Time ◽  
Knowledge Based Systems ◽  
Time Process ◽  
Knowledge Based

Expert Systems Methodology for Real-time Process Control

1987 ◽  
Vol 20 (5) ◽  
pp. 279-286 ◽  
Author(s):  
R.L. Moore ◽  
L.B. Hawkinson ◽  
M. Levin ◽  
A.G. Hofmann ◽  
B.L. Matthews ◽  
...  
Keyword(s):  
Process Control ◽  
Expert Systems ◽  
Real Time ◽  
Time Process ◽  
Systems Methodology

scholarly journals Development of a fluid bed granulation process control strategy based on real-time process and product measurements

Talanta ◽  
2012 ◽  
Vol 100 ◽  
pp. 293-302 ◽  
Author(s):  
Anneleen Burggraeve ◽  
Ana F.T. Silva ◽  
Tom Van Den Kerkhof ◽  
Mario Hellings ◽  
Chris Vervaet ◽  
...  
Keyword(s):  
Process Control ◽  
Real Time ◽  
Control Strategy ◽  
Time Process ◽  
Granulation Process ◽  
Fluid Bed ◽  
Fluid Bed Granulation

Real Time Process Monitoring with Multiwave-Length Pyrometric Interferometry (Pi)

1993 ◽  
Vol 324 ◽  
Author(s):  
F.G. BÖbel ◽  
A. Wowchak ◽  
P.P. Chow ◽  
J. Van Hove ◽  
L.A. Chow
Keyword(s):  
Process Control ◽  
Real Time ◽  
Device Fabrication ◽  
Time Process ◽  
Quarter Wavelength ◽  
Surface Emitting Laser ◽  
In Situ Sensing ◽  
Temperature And Growth ◽  
Rate Evaluation ◽  
Two Parameters

AbstractPyrometry Interferometry (PI) is a powerful technique for in-situ sensing of the wafer temperature and growth rate. Evaluation of the two parameters would allow exact process control required for sophisticated device fabrication and material processing. The PI technique analyzes the interference patterns of the thermal radiation from the growing layer with a changing thickness d at growth temperature T. Since it is non-contact, applicable to all semiconductor materials and insensitive to wafer motion, the method is an ideal candidate for real time process control. We use a reflection assisted method to aid real time computation of these parameters. One could select the wavlength of interest to optimize the temperature and layer thickness resolution. We present data on MBE grown quarter wavelength stacks of GaAs and AlAs, and silicon oxidation to show P1 is extremely useful for growth of surface emitting laser and for silicon processing.

Sign in / Sign up

Export Citation Format

Share Document