Ge content and recess depth dependence of the band-to-band tunneling current in Si1-xGex/Si hetero-junctions

2011 ◽  
Author(s):  
A. Luque Rodriguez ◽  
J. A. Jimenez Tejada ◽  
M. Bargallo Gonzalez ◽  
G. Eneman ◽  
C. Claeys ◽  
...  
Keyword(s):  
Tunneling Current ◽  
Depth Dependence ◽  
Band To Band Tunneling

A SILICON GERMANIUM GRADED JUNCTIONLESS TRANSISTOR WITH LOW OFF CURRENT

2013 ◽  
Vol 12 (06) ◽  
pp. 1350043 ◽  
Author(s):  
NEELAM SURANA ◽  
BAHNIMAN GHOSH ◽  
BALL MUKUND MANI TRIPATHY ◽  
AKSHAY KUMAR SALIMATH
Keyword(s):  
Leakage Current ◽  
Silicon Germanium ◽  
Large Deviation ◽  
Hole Concentration ◽  
Tunneling Current ◽  
Drain Voltage ◽  
Band Gap Engineering ◽  
Junctionless Transistor ◽  
Band To Band Tunneling ◽  
State Band

We propose a Ge / Si graded junctionless transistor (JLT) which helps to reduce the band-to-band tunneling current in off-state for highly doped double gate junctionless transistor (DGJLT). In this paper, we show that there is large band-to-band tunneling (BTBT) current in off-state of silicon-channel and germanium-channel DGJLT, which causes increase in the off-state leakage current by several orders. With the help of band-gap engineering, we found that by using Ge / Si graded channel DGJLT off-state band-to-band tunneling current can be reduced. It is also observed that there is large deviation in the off-state leakage current with variation of drain voltage for Si and Ge body DGJLT, which reduces device stability. It is found that in Ge / Si graded DGJLT variation off-state leakage current with drain voltage is controlled. In Si and Ge , DGJLT electrons from the valence band of the channel tunnel to the conduction band of drain leaves holes which causes increased hole concentration in the channel creating parasitic 'BJT'.

Metallic-nanoparticle assisted enhanced band-to-band tunneling current

2011 ◽  
Vol 99 (13) ◽  
pp. 133116 ◽  
Author(s):  
Deblina Sarkar ◽  
Kaustav Banerjee
Keyword(s):  
Tunneling Current ◽  
Metallic Nanoparticle ◽  
Band To Band Tunneling

Comparative Study on Off-State Breakdown Characteristics in Nanowire Junctionless and Inversion Mode Multiple Gate MOSFET

2013 ◽  
Vol 684 ◽  
pp. 295-298
Author(s):  
Seung Min Lee ◽  
Hyun Jun Jang ◽  
Jong Tae Park
Keyword(s):  
Comparative Study ◽  
Leakage Current ◽  
Tunneling Current ◽  
Gate Bias ◽  
Inversion Mode ◽  
3 Dimensional ◽  
Breakdown Mechanism ◽  
Band To Band Tunneling ◽  
State Breakdown ◽  
And Inversion

A comparative study on off-state breakdown characteristics in nanowire JL and IM multiple gate MOSFETs has been performed for different gate bias voltages and fin widths. In order to understand the drain breakdown mechanism with different transistor structures, the device was simulated using the 3-dimensional ATLAS software. The band-to-band tunneling current and the gate-induced-drain-leakage current trigger the off-state breakdown in JL transistor and IM transistor, respectively. From experiment and simulation, the off-state breakdown voltage is lower in JL transistor than in IM transistor. As the gate is biased more negatively, the off-state breakdown voltages are increased in JL and IM transistors.

Effects of the intrinsic layer width on the band-to-band tunneling current in p-i-n GaN-based avalanche photodiodes

2009 ◽  
Vol 24 (9) ◽  
pp. 095006 ◽  
Author(s):  
Ling Wang ◽  
Xichang Bao ◽  
Wenjing Zhang ◽  
Chao Li ◽  
Yonggang Yuan ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Tunneling Current ◽  
Layer Width ◽  
Band To Band Tunneling

scholarly journals Overlapped Gate-Source/Drain H-shaped TFET: Proposal, Design and Linearity Analysis

2021 ◽  
Author(s):  
Utkarsh Upadhyay ◽  
Ashish Raman ◽  
RAVI RANJAN ◽  
Naveen Kumar
Keyword(s):  
Potential Energy ◽  
Electric Potential ◽  
Tunneling Current ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Third Order ◽  
Band To Band Tunneling ◽  
Non Local ◽  
Intermodulation Distortions ◽  
Intercept Point

Abstract In this paper, the proposed design of H-shaped TFET has been discussed. This design is providing a high Ion/Ioff ratio with better Ion. HfO2 is used for better tunneling current. With this device, Different parameters such as unit parameter, analogue parameter, and linearity parameter have been studied and investigated the output of the H-TFET. As unit parameters, the electric field, electric potential, energy band diagram, and non-local band-to-band tunneling rate (BTBT) have all been observed. Second and third-order harmonics distortion (HD2, HD3), third-order current intercept point (IIP3), third-order intermodulation distortions (IMD3), and second and third-order voltage intercept point (VIP2, VIP3) are evaluated as linearity parameters that characterize the device's distortions and linearity. We obtained Ion\({\text{=1.6×}10}^{-4}\) A/µm, Ioff=2.1\({\text{×}10}^{-19}\) A/µm, Ion /Ioff=7.6\({\text{×}10}^{14}\),threshold voltage Vt=0.3449 V. © 2017 Elsevier Inc. All rights reserved.

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