Charge transition levels of boron and silicon impurities in GaAs

2011 Semiconductor Conference Dresden ◽

10.1109/scd.2011.6068765 ◽

2011 ◽

Author(s):

R. Leitsmann ◽

F. Chicker ◽

Ph. Planitz ◽

C. Radehaus ◽

U. Kretzer ◽

...

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