Amplitude PWM with increased factor of source voltage use

2016 ◽  
Author(s):  
Tatiana Tereschenko ◽  
Julia Yamnenko
Keyword(s):  
Source Voltage

Carrier Redistribution Analysis of Gate-Biased SiC Power-MOSFET Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2015 ◽  
Author(s):  
Norimichi Chinone ◽  
Yasuo Cho
Keyword(s):  
Cross Section ◽  
Measurement System ◽  
Higher Order ◽  
Depletion Layer ◽  
Gate Bias ◽  
Power Mosfet ◽  
Nonlinear Dielectric ◽  
Voltage Dependent ◽  
Carrier Redistribution ◽  
Source Voltage

Abstract Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.

scholarly journals Equivalent Circuit Modeling of a Dual-Gate Graphene FET

Electronics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 63
Author(s):  
Saima Hasan ◽  
Abbas Z. Kouzani ◽  
M A Parvez Mahmud
Keyword(s):  
Equivalent Circuit ◽  
Gate Voltage ◽  
Voltage Dependence ◽  
Drain Current ◽  
Bilayer Graphene ◽  
Circuit Modeling ◽  
Equivalent Circuit Modeling ◽  
Dual Gate ◽  
Source Voltage ◽  
Transit Frequency

This paper presents a simple and comprehensive model of a dual-gate graphene field effect transistor (FET). The quantum capacitance and surface potential dependence on the top-gate-to-source voltage were studied for monolayer and bilayer graphene channel by using equivalent circuit modeling. Additionally, the closed-form analytical equations for the drain current and drain-to-source voltage dependence on the drain current were investigated. The distribution of drain current with voltages in three regions (triode, unipolar saturation, and ambipolar) was plotted. The modeling results exhibited better output characteristics, transfer function, and transconductance behavior for GFET compared to FETs. The transconductance estimation as a function of gate voltage for different drain-to-source voltages depicted a proportional relationship; however, with the increase of gate voltage this value tended to decline. In the case of transit frequency response, a decrease in channel length resulted in an increase in transit frequency. The threshold voltage dependence on back-gate-source voltage for different dielectrics demonstrated an inverse relationship between the two. The analytical expressions and their implementation through graphical representation for a bilayer graphene channel will be extended to a multilayer channel in the future to improve the device performance.

Low Distortion Analog Front-End for Digital Electret Microphone

2013 ◽  
Vol 475-476 ◽  
pp. 1633-1637
Author(s):  
Seung Yong Bae ◽  
Jong Do Lee ◽  
Eun Ju Choe ◽  
Gil Cho Ahn
Keyword(s):  
Audio Signal ◽  
Cmos Technology ◽  
Common Mode ◽  
Electret Microphone ◽  
Front End ◽  
Voltage Variation ◽  
Analog Front End ◽  
Source Follower ◽  
Source Voltage ◽  
Low Distortion

This paper presents a low distortion analog front-end (AFE) circuit to process electret microphone output signal. A source follower is employed for the input buffer to interface electret microphone directly to the IC with level shifting. A single-ended to differential converter with output common-mode control is presented to compensate the common-mode variation resulted from gate to source voltage variation in the source follower. A replica stage is adopted to control the output bias voltage of the single-ended to differential converter. The prototype AFE circuit fabricated in a 0.35μm CMOS technology achieves 68.2dB peak SNDR and 79.9dB SFDR over an audio signal bandwidth of 20kHz with 2.5V supply while consuming 1.05mW.

Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits

2010 ◽  
Vol 645-648 ◽  
pp. 1159-1162 ◽  
Author(s):  
Arnaud Devie ◽  
Dominique Tournier ◽  
Phillippe Godignon ◽  
Miquel Vellvehi ◽  
Josep Montserrat ◽  
...  
Keyword(s):  
Analog Circuits ◽  
Temperature Dependent ◽  
Source Voltage ◽  
Dc Characterization

Lateral normally-on dual gates MESFETs withstanding a drain/source voltage in excess of 200V have been fabricated on semi-insulating 4H-SiC substrate. This paper reports on the fabrication, DC characterization and in-circuit behavior of the MESFETs. Temperature dependent DC characterization has been carried out up to 473K. The performances of basic analog circuits such as an amplifier and a clock, using these MESFETs, are detailed and analyzed.

Mode Selecting Control of Interior Permanent Magnet Synchronous Motor for Full Speed Range Operation

2010 ◽  
Vol 43 ◽  
pp. 21-27 ◽  
Author(s):  
Zhi Hong Wu ◽  
Si Bei Wu ◽  
Yuan Zhu ◽  
Guang Yu Tian
Keyword(s):  
State Transition ◽  
Permanent Magnet Synchronous Motor ◽  
Operating Conditions ◽  
Constant Torque ◽  
Speed Range ◽  
Interior Permanent Magnet ◽  
Full Speed ◽  
Source Voltage ◽  
Transition Scheme ◽  
Flux Weakening

The paper presents a new method for mode selecting which includes constant torque mode and flux-weakening mode. The proposed method modifies the working modes not by LUT (look-up table), but by the size of T0. Attractive features of this state transition technique include no dependency on the machine parameters, the least calculated quantities, making full use of the source voltage of the battery, and smooth and fast transition into and out of the flux-weakening mode. Simulation results at various operating conditions are presented to verify the feasibility of the proposed mode transition scheme.

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