Investigation of Excimer Laser Annealing of Si using Photoluminescence at Room Temperature

2007 ◽  
Author(s):  
H. Bourdon ◽  
A. Halimaoui ◽  
J. Venturini ◽  
F. Gonzatti ◽  
D. Dutartre
Keyword(s):  
Excimer Laser ◽  
Room Temperature ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Room-temperature fabrication of highly oriented β-Ga2O3 thin films by excimer laser annealing

2015 ◽  
Vol 424 ◽  
pp. 38-41 ◽  
Author(s):  
Daishi Shiojiri ◽  
Ryosuke Yamauchi ◽  
Daiji Fukuda ◽  
Nobuo Tsuchimine ◽  
Satoru Kaneko ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Room Temperature ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Room temperature indium tin oxide by XeCl excimer laser annealing for flexible display

2004 ◽  
Vol 460 (1-2) ◽  
pp. 291-294 ◽  
Author(s):  
Wonsuk Chung ◽  
Michael O. Thompson ◽  
Paul Wickboldt ◽  
Daniel Toet ◽  
Paul G. Carey
Keyword(s):  
Excimer Laser ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Flexible Display ◽  
Xecl Excimer Laser

Excimer laser annealing and chemical texturing of ZnO:Al sputtered at room temperature for photovoltaic applications

2011 ◽  
Vol 95 (10) ◽  
pp. 2823-2830 ◽  
Author(s):  
E.V. Johnson ◽  
P. Prod'homme ◽  
C. Boniface ◽  
K. Huet ◽  
T. Emeraud ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Room Temperature ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Photovoltaic Applications

Large-Grain Doped Poly-Si Films Fabricated Using New Excimer Laser Annealing Technique

1992 ◽  
Vol 283 ◽  
Author(s):  
Hiroshi Iwata ◽  
Tomoyuki Nohda ◽  
Satoshi Ishida ◽  
Takashi Kuwahara ◽  
Keiichi Sano ◽  
...  
Keyword(s):  
Grain Size ◽  
Sheet Resistance ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solidification Velocity ◽  
Excimer Laser Annealing ◽  
Arf Excimer Laser ◽  
Si Films

ABSTRACTThe grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.

Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

2006 ◽  
Vol 45 (4A) ◽  
pp. 2726-2730 ◽  
Author(s):  
Naoya Kawamoto ◽  
Atsushi Masuda ◽  
Naoto Matsuo ◽  
Yasuhiro Seri ◽  
Toshimasa Nishimori ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Reduction of the size of the implanted silver nanoparticles in float glass during excimer laser annealing

1998 ◽  
Vol 136 (4) ◽  
pp. 298-305 ◽  
Author(s):  
A.L Stepanov ◽  
D.E Hole ◽  
A.A Bukharaev ◽  
P.D Townsend ◽  
N.I Nurgazizov
Keyword(s):  
Silver Nanoparticles ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Float Glass ◽  
Excimer Laser Annealing
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