A reduced representation of 2×25 kV electrical systems for high-speed railways

2003 ◽  
Author(s):  
E. Pilo ◽  
L. Rouco ◽  
A. Fernandez
Keyword(s):  
High Speed ◽  
Reduced Representation ◽  
Electrical Systems

Controlled Arming of Mechanical Systems Embedded into Embarked Electrical Systems

2014 ◽  
Vol 555 ◽  
pp. 209-216
Author(s):  
Gheorghe Negru
Keyword(s):  
Kalman Filter ◽  
Mechanical System ◽  
High Speed ◽  
Mechanical Systems ◽  
Electrical Systems ◽  
General Motion

The paper presents an application of the Kalman filter to achieve the controlled arming of mechanical system embedded into embarked electrical systems (FMES). The solution of FMES which contain mechanical subsystems electronically controlled could significantly reduce the influence, on their functioning, of the general motion of high speed object (HSO) .

Monitoring Elite Soccer Players’ External Loads Using Real-Time Data

2017 ◽  
Vol 12 (10) ◽  
pp. 1285-1287 ◽  
Author(s):  
Steve Barrett
Keyword(s):  
Real Time ◽  
High Speed ◽  
Training Session ◽  
Maximum Velocity ◽  
Soccer Players ◽  
Data Sets ◽  
Time Data ◽  
Electrical Systems ◽  
Locomotor Activities ◽  
Physical Output

Purpose: To assess the validity of measuring locomotor activities and PlayerLoad using real-time (RT) data collection during soccer training. Methods: Twenty-nine English soccer players participated. Each player wore the same MEMS device (Micromechanical Electrical Systems; S5, Optimeye; CatapultSports, Melbourne, Australia) during 21 training sessions (N = 331 data sets) in the 2015–16 and 2016–17 seasons. An RT receiver (TRX; Catapultsports, Melbourne, Australia) was used to collect the locomotor activities and PlayerLoad data in RT and compared with the postevent downloaded (PED) data. PlayerLoad and locomotor activities (total distance covered; total high-speed running distance covered, >5.5#x00A0;m/s; total sprinting distance covered, >7 m/s; maximum velocity) were analyzed. Results: Correlations were near perfect for all variables analyzed (r = .98–1.00), with a varied level of noise between RT and PED also (0.3–9.7% coefficient of variation). Conclusions: Locomotor activities and PlayerLoad can use both RT and PED concurrently to quantify a player’s physical output during a training session. Caution should be taken with higher-velocity-based locomotor activities during RT compared to PED.

scholarly journals High-Speed Transmission in Long-Haul Electrical Systems

2018 ◽  
Vol 2018 ◽  
pp. 1-13
Author(s):  
Beatriz Juárez-Campos ◽  
Elena I. Kaikina ◽  
Pavel I. Naumkin ◽  
Héctor Francisco Ruiz-Paredes
Keyword(s):  
Fourier Transformation ◽  
High Speed ◽  
Large Time ◽  
Large Time Asymptotics ◽  
Electrical Systems ◽  
Time Asymptotics

We study the equations governing the high-speed transmission in long-haul electrical systems i∂tu-1/3∂x3u=iλ∂xu2u, t,x∈R+×R, u0,x=u0x, x∈R, where λ∈R,  ∂xα=F-1ξαF, and F is the Fourier transformation. Our purpose in this paper is to obtain the large time asymptotics for the solutions under the nonzero mass condition ∫u0xdx≠0.

A Precise and High Speed Charge-Pump PLL Model Based on SystemC/SystemC-AMS

2012 ◽  
Vol 58 (3) ◽  
pp. 225-232
Author(s):  
Kezheng Ma ◽  
Rene Van Leuken ◽  
Maja Vidojkovic ◽  
Jac Romme ◽  
Simonetta Rampu ◽  
...  
Keyword(s):  
High Speed ◽  
Design Environment ◽  
Electrical Systems ◽  
Measurement Results ◽  
Charge Pump Pll ◽  
Simulation Results ◽  
The Cost ◽  
Signal Modelling ◽  
Beta Version ◽  
Simulation Time

Abstract The Phase Locked Loop (PLL) has become an important part of electrical systems. When designing a PLL, an efficient and reliable simulation platform for system evaluation is needed. However, the closed loop simulation of a PLL is time consuming. To address this problem, in this paper, a new PLL model containing both digital and analog parts based on SystemC/SystemC-AMS (BETA version) is presented. Many imperfections such as Voltage Control Oscillator (VCO) noise or reference jitter are included in this model. By comparing with the Matlab model, the SystemC/SystemC-AMS model can dramatically reduce simulation time. Also, by comparing with Analog Devices ADI SimPLL simulation results, Cadence simulation results and real measurement results, the accuracy of the SystemC/SystemC-AMS model is demonstrated. The paper shows the feasibility of a unified design environment for mixed-signal modelling based on SystemC/SystemC-AMS in order to reduce the cost and design time of electrical systems.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

Vacuum System to Minimize the Specimen Contamination of High-Performance EM

1977 ◽  
Vol 35 ◽  
pp. 68-69
Author(s):  
N. Yoshimura ◽  
K. Shirota ◽  
T. Etoh
Keyword(s):  
Electron Microscope ◽  
High Speed ◽  
High Performance ◽  
High Vacuum ◽  
Vacuum System ◽  
Pump System ◽  
Pumping System ◽  
Diffusion Pump ◽  
Almost All ◽  
Cascade Type

One of the most important requirements for a high-performance EM, especially an analytical EM using a fine beam probe, is to prevent specimen contamination by providing a clean high vacuum in the vicinity of the specimen. However, in almost all commercial EMs, the pressure in the vicinity of the specimen under observation is usually more than ten times higher than the pressure measured at the punping line. The EM column inevitably requires the use of greased Viton O-rings for fine movement, and specimens and films need to be exchanged frequently and several attachments may also be exchanged. For these reasons, a high speed pumping system, as well as a clean vacuum system, is now required. A newly developed electron microscope, the JEM-100CX features clean high vacuum in the vicinity of the specimen, realized by the use of a CASCADE type diffusion pump system which has been essentially improved over its predeces- sorD employed on the JEM-100C.

The on-line use of histogram data for high-speed correction and alignment of electron microscope images

1984 ◽  
Vol 42 ◽  
pp. 556-557
Author(s):  
William Krakow
Keyword(s):  
Power Spectrum ◽  
High Speed ◽  
Direct Memory Access ◽  
Digital Television ◽  
Contrast Transfer Function ◽  
The Past ◽  
High Resolution Tem ◽  
On Line ◽  
Correction Of Astigmatism ◽  
The Fourier Transform

In the past few years on-line digital television frame store devices coupled to computers have been employed to attempt to measure the microscope parameters of defocus and astigmatism. The ultimate goal of such tasks is to fully adjust the operating parameters of the microscope and obtain an optimum image for viewing in terms of its information content. The initial approach to this problem, for high resolution TEM imaging, was to obtain the power spectrum from the Fourier transform of an image, find the contrast transfer function oscillation maxima, and subsequently correct the image. This technique requires a fast computer, a direct memory access device and even an array processor to accomplish these tasks on limited size arrays in a few seconds per image. It is not clear that the power spectrum could be used for more than defocus correction since the correction of astigmatism is a formidable problem of pattern recognition.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

An atomic-resolution microscope study of Al contracts on GaAs

1986 ◽  
Vol 44 ◽  
pp. 726-727
Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
High Speed ◽  
Schottky Contacts ◽  
Detailed Knowledge ◽  
The Past ◽  
Semiconductor Interfaces ◽  
Deposited Metal ◽  
Microwave Applications ◽  
Free Interfaces ◽  
Potential Use

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

Sign in / Sign up

Export Citation Format

Share Document