Learning partial power grasp with task-specific contact

2016 ◽  
Author(s):  
Miao Li
Keyword(s):  
Specific Contact ◽  
Power Grasp

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Process Condition ◽  
Specific Contact Resistance ◽  
High Doping Level ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

scholarly journals Grasping Assisting Algorithm in Tele-Operated Robotic Gripper

2021 ◽  
Vol 11 (6) ◽  
pp. 2640
Author(s):  
Tomer Fine ◽  
Guy Zaidner ◽  
Amir Shapiro
Keyword(s):  
State Of The Art ◽  
Human Subjects ◽  
Quality Measures ◽  
Human Operator ◽  
Physical Presence ◽  
Complete State ◽  
The Future ◽  
Power Grasp ◽  
Grasp Quality

The involvement of Robots and automated machines in different industries has increased drastically in recent years. Part of this revolution is accomplishing tasks previously performed by humans with advanced robots, which would replace the entire human workforce in the future. In some industries the workers are required to complete different operations in hazardous or difficult environments. Operations like these could be replaced with the use of tele-operated systems that have the capability of grasping objects in their surroundings, thus abandoning the need for the physical presence of the human operator at the area while still allowing control. In this research our goal is to create an assisting system that would improve the grasping of a human operator using a tele-operated robotic gripper and arm, while advising the operator but not forcing a solution. For a given set of objects we computed the optimal grasp to be achieved by the gripper, based on two grasp quality measures of our choosing (namely power grasp and precision grasp). We then tested the performance of different human subjects who tried to grasp the different objects with the tele-operated system, while comparing their success to unassisted and assisted grasping. Our goal is to create an assisting algorithm that would compute optimal grasps and might be integrated into a complete, state-of-the-art tele-operated system.

scholarly journals The HeLa Pur factor binds single-stranded DNA at a specific element conserved in gene flanking regions and origins of DNA replication.

1992 ◽  
Vol 12 (3) ◽  
pp. 1257-1265 ◽  
Author(s):  
A D Bergemann ◽  
E M Johnson
Keyword(s):  
Dna Replication ◽  
Consensus Sequence ◽  
Specific Element ◽  
Contact Points ◽  
Nuclear Extracts ◽  
Specific Contact ◽  
Myc Gene ◽  
Specific Affinity ◽  
Initiation Of Dna Replication ◽  
Flanking Regions

A major site of DNA bending is located 1.6 kb upstream of the P1 transcription start site of the human c-myc gene, near the center of a reported zone of initiation of DNA replication. A repeated, purine-rich element, termed PUR, at the bend site is specifically bound by a protein in HeLa cell nuclear extracts. This protein has specific affinity for the purine-rich single strand of the element. Methylation interference maps a pattern of specific contact points with guanosine bases in a 24-mer oligonucleotide containing the element. UV cross-linking reveals that contact is made by a polypeptide of approximately 28 kDa. The PUR element is present at origins of replication and in gene flanking regions in a variety of eukaryotes from yeasts through humans. The consensus sequence GGNNGAGGGAGARRRR has been derived. This element is present near centers of regions of two mammalian loci (human c-myc and hamster dhfr) recently reported as initiation zones for DNA replication. A 24-mer oligonucleotide representing the hamster dhfr version of the PUR element effectively competes with the human c-myc version for binding to Pur.

Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN

2007 ◽  
Vol 556-557 ◽  
pp. 1027-1030 ◽  
Author(s):  
Ferdinando Iucolano ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
A. Alberti ◽  
Vito Raineri
Keyword(s):  
Contact Resistance ◽  
Field Emission ◽  
Ohmic Contacts ◽  
Theoretical Models ◽  
Specific Contact Resistance ◽  
Strong Increase ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Structural And Electrical Properties ◽  
Specific Contact

In this work, the structural and electrical properties of Ti/Al/Ni/Au contacts on n-type Gallium Nitride were studied. An ohmic behaviour was observed after annealing above 700°C. The structural analysis showed the formation of an interfacial TiN layer and different phases in the reacted layer (AlNi, AlAu4, Al2Au) upon annealing. The temperature dependence of the specific contact resistance demonstrated that the current transport occurs through thermoionic field emission in the contacts annealed at 600°C, and field emission after annealing at higher temperatures. By fitting the data with theoretical models, a reduction of the Schottky barrier from 1.21eV after annealing at 600°C to 0.81eV at 800°C was demonstrated, together with a strong increase of the carrier concentration at the interface. The reduction of the contact resistance upon annealing was discussed by correlating the structural and electrical characteristics of the contacts.

Ultra-Low Resistance Ni-Based Contacts to n-InP: the Dependence of Contact Resistivity on the Condition of the Metal-Semiconductor Interface

1993 ◽  
Vol 318 ◽  
Author(s):  
Navid S. Fatemi ◽  
Victor G. Weizer
Keyword(s):  
Deposition Process ◽  
Atomic Ratio ◽  
Contact Resistivity ◽  
Semiconductor Interface ◽  
Near Surface ◽  
Process Use ◽  
Fold Reduction ◽  
Specific Contact ◽  
Order Of Magnitude ◽  
First Time

ABSTRACTNear-theoretical-minimum values of specific contact resistivity, ρc (in the mid-to-low E-8 Ω-cm2 range) have been achieved for Ni-based contacts to moderately doped (2E18 cm−3) n-type InP. In each case these values are an order of magnitude lower than those previously achieved. These ultra-low resistivities are shown to result when the metallurgical interaction rate between the contact metal and the semiconductor is sufficiently reduced. Several methods of reducing the metal-InP reaction rate and thus achieving lowered resistivity values are demonstrated. We show, for instance, that the introduction of a thin (100Å) Au layer at the metal-InP interface retards metal-semiconductor intermixing during sintering and results in a ten-fold reduction in pc. Another method consists of ensuring the perfection of the near-surface InP lattice prior to and during contact deposition process. Use of this technique has enabled us to fabricate, for the first time, Ni-only contacts with pc values in the low E-8 Ω-cm2 range. We present an explanation for these observations that is based upon the magnitude of the In-to-P atomic ratio at the metal-InP interface.

Investigation of Ge, As, and Au Diffusion in Non-Alloyed Epitaxial Au-Ge Ohmic Contacts to n-GaAs Using Secondary Ion Mass Spectroscopy Backside Sputter Depth-Profiling

1991 ◽  
Vol 240 ◽  
Author(s):  
H. S. LEE ◽  
R. T. Lareau ◽  
S. N. Schauer ◽  
R. P. Moerkirk ◽  
K. A. Jones ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
High Concentration ◽  
Ohmic Behavior ◽  
Preferential Sputtering ◽  
Specific Contact ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTA SIMS backside sputter depth-profile technique using marker layers is employed to characterize the diffusion profiles of the Ge, As, and Au in the Au-Ge contacts after annealing at 320 C for various times. This technique overcomes difficulties such as ion beam mixing and preferential sputtering and results in high depth resolution measurements since diffusion profiles are measured from low to high concentration. Localized reactions in the form of islands were observed across the surface of the contact after annealing and were composed of Au, Ge, and As, as determined by SIMS imaging and Auger depth profiling. Backside SIMS profiles indicate both Ge and Au diffusion into the GaAs substrate in the isalnd regions. Ohmic behavior was obtained after a 3 hour anneal with a the lowest average specific contact resistivity found to be ∼ 7 × 100−6 Ω- cm2.

Si+ Implantation and Activation in GaN Comparison of GaN on Sapphire and GaN on Silicon

2012 ◽  
Vol 711 ◽  
pp. 213-217 ◽  
Author(s):  
Anne Elisabeth Bazin ◽  
Frédéric Cayrel ◽  
Mohamed Lamhamdi ◽  
Arnaud Yvon ◽  
Jean Christophe Houdbert ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ohmic Contacts ◽  
Silicon Oxide ◽  
Electrical Activation ◽  
Specific Contact Resistance ◽  
Force Microscopy ◽  
Atomic Force ◽  
Specific Contact ◽  
Good Behaviour ◽  
Scanning Electron

In this paper, we evaluated gallium nitride heteroepitaxially grown on sapphire (GaN/Sa) and grown on silicon (GaN/Si) faced to implantation doping. Si+ was implanted on low doped n-type epilayers in order to create a plateau around 1020at.cm-3. All the samples were capped with a silicon oxide and annealed between 1000°C and 1150°C. The surface quality was evaluated in terms of roughness, pit density and maximum pit diameter using Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). Finally, the dopant electrical activation was studied with Ti-Al contacts using the circular Transfert Length Method (c-TLM). This study shows that low Specific Contact Resistance (SCR) values of 8x10-5Ω.cm2 and 6x10-6Ω.cm2 are respectively obtained on GaN/Sa sample annealed at 1150°C-2min and on GaN/Si sample annealed at 1150°C-30s, proving that good ohmic contacts are obtained on both materials. Nevertheless, a compromise has to be done between the low SCR values obtained and the GaN surface degradation, observed by AFM and SEM after the different annealing treatments and which could affect the good behaviour of the GaN devices.

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