Performance and reliability characteristics of the band edge high-k/metal gate nMOSFETs with La-doped Hf-silicate gate dielectrics

2008 ◽  
Author(s):  
C. Y. Kang ◽  
C. S. Park ◽  
D. Heh ◽  
C. Young ◽  
P. Kirsch ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Band Edge ◽  
Metal Gate ◽  
Reliability Characteristics ◽  
High K ◽  
La Doped

Reliability Characteristics of La-doped High-k/Metal Gate nMOSFETs

2009 ◽  
Vol 9 (3) ◽  
pp. 166-173 ◽  
Author(s):  
C.Y. Kang ◽  
R. Choi ◽  
B.H. Lee ◽  
R. Jammy
Keyword(s):  
Metal Gate ◽  
Reliability Characteristics ◽  
High K ◽  
La Doped

Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing

2010 ◽  
Vol 50 (5) ◽  
pp. 618-621 ◽  
Author(s):  
Chia-Wei Hsu ◽  
Yean-Kuen Fang ◽  
Wen-Kuan Yeh ◽  
Chun-Yu Chen ◽  
Yen-Ting Chiang ◽  
...  
Keyword(s):  
Metal Gate ◽  
Post Deposition Annealing ◽  
Reliability Characteristics ◽  
High K ◽  
Post Deposition

Additive Process Induced Strain (APIS) Technology for Lg = 30nm Band-Edge High-k/Metal Gate nMOSFET

2008 ◽  
Author(s):  
M. M. Hussain ◽  
K. Rader ◽  
C. Smith ◽  
C. Young ◽  
S. Suthram ◽  
...  
Keyword(s):  
Band Edge ◽  
Metal Gate ◽  
Additive Process ◽  
High K

GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics

2012 ◽  
Vol 70 ◽  
pp. 44-49 ◽  
Author(s):  
M. Galeti ◽  
M. Rodrigues ◽  
J.A. Martino ◽  
N. Collaert ◽  
E. Simoen ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Metal Gate ◽  
High K ◽  
Tin Metal

Recent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacks

2007 ◽  
Vol 84 (9-10) ◽  
pp. 1853-1856 ◽  
Author(s):  
V. Narayanan ◽  
V.K. Paruchuri ◽  
E. Cartier ◽  
B.P. Linder ◽  
N. Bojarczuk ◽  
...  
Keyword(s):  
High Mobility ◽  
Band Edge ◽  
Gate Stacks ◽  
Metal Gate ◽  
Recent Advances ◽  
High K
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