Analysis and modeling of critical current density effects on electromigration failure distributions of Cu dual-damascene vias

2008 ◽  
Author(s):  
A. S. Oates ◽  
M.H. Lin
Keyword(s):  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Density Effects ◽  
Dual Damascene

Electromigration Study of Cu Dual-damascene Interconnects with a CVD MSQ Low k Dielectric

2003 ◽  
Vol 766 ◽  
Author(s):  
Xia Lu ◽  
Ki-Don Lee ◽  
Sean Yoon ◽  
Hideki Matsuhashi ◽  
Michael Lu ◽  
...  
Keyword(s):  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Failure Modes ◽  
Critical Length ◽  
Layer Interface ◽  
Dual Damascene ◽  
Cap Layer ◽  
Damascene Interconnects ◽  
Low K

AbstractElectromigration reliability in Cu dual-damascene interconnects with a CVD MSQ low k dielectric was investigated. Statistical studies were carried out using the critical length (LC) test structures containing multi-link line/via elements with varying line lengths. EM lifetime characteristics, critical current density-length product (jL)c, and failure mechanisms were discussed and compared with Cu/oxide structures. Our results suggested that the diffusion at the cap layer interface was the dominant mechanism for EM mass transport. The confinement effect, in terms of an effective modulus B, can be used to account for the shorter EM lifetime and smaller critical current density-length product (jL)c observed for Cu/CVD MSQ low k interconnects. Failure analysis by FIB confirmed the presence of multiple failure modes including voiding at the via bottom, Cu extrusion and delamination at Cu/cap layer interface.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

Facet Topography and Dislocation Structure as a Possible Source for Electrical Heterogeneity in [001] TILT Bicrystals of YBa2Cu3O7-δ

1996 ◽  
Vol 54 ◽  
pp. 338-339
Author(s):  
I-Fei Tsu ◽  
D.L. Kaiser ◽  
S.E. Babcock
Keyword(s):  
Grain Boundary ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Electromagnetic Properties ◽  
Length Scale ◽  
Density Values ◽  
Current Densities ◽  
Applied Fields ◽  
A Current

A current theme in the study of the critical current density behavior of YBa2Cu3O7-δ (YBCO) grain boundaries is that their electromagnetic properties are heterogeneous on various length scales ranging from 10s of microns to ˜ 1 Å. Recently, combined electromagnetic and TEM studies on four flux-grown bicrystals have demonstrated a direct correlation between the length scale of the boundaries’ saw-tooth facet configurations and the apparent length scale of the electrical heterogeneity. In that work, enhanced critical current densities are observed at applied fields where the facet period is commensurate with the spacing of the Abrikosov flux vortices which must be pinned if higher critical current density values are recorded. To understand the microstructural origin of the flux pinning, the grain boundary topography and grain boundary dislocation (GBD) network structure of [001] tilt YBCO bicrystals were studied by TEM and HRTEM.

Effects of surface damage on critical current density in MgB2 thin films

2021 ◽  
Vol 22 ◽  
pp. 14-19
Author(s):  
Soon-Gil Jung ◽  
Duong Pham ◽  
Jung Min Lee ◽  
Yoonseok Han ◽  
Won Nam Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Surface Damage ◽  
Mgb2 Thin Films
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