Highly reliable dielectric/metal bilayer sidewall diffusion barrier in Cu/porous organic ultra low-k interconnects

2004 ◽  
Author(s):  
Zhe Chen ◽  
K. Prasad ◽  
C.Y. Li ◽  
P.W. Lu ◽  
S.S. Su ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Low K

scholarly journals Probing diffusion barrier integrity on porous silica low-k thin films using positron annihilation lifetime spectroscopy

2001 ◽  
Vol 89 (9) ◽  
pp. 5138-5144 ◽  
Author(s):  
Jia-Ning Sun ◽  
David W. Gidley ◽  
Terry L. Dull ◽  
William E. Frieze ◽  
Albert F. Yee ◽  
...  
Keyword(s):  
Thin Films ◽  
Positron Annihilation ◽  
Diffusion Barrier ◽  
Porous Silica ◽  
Positron Annihilation Lifetime Spectroscopy ◽  
Barrier Integrity ◽  
Positron Annihilation Lifetime ◽  
Low K

Evaluation of PECVD deposited Boron Nitride as Copper Diffusion Barrier on Porous Low-k Materials

2004 ◽  
Vol 812 ◽  
Author(s):  
J. Liu ◽  
W. D. Wang ◽  
L. Wang ◽  
D. Z. Chi ◽  
K. P. Loh
Keyword(s):  
Boron Nitride ◽  
Diffusion Barrier ◽  
Microwave Plasma ◽  
Growth Parameters ◽  
Dielectric Constants ◽  
Nitride Film ◽  
Voltage Measurement ◽  
Copper Diffusion ◽  
Plasma Enhanced Cvd ◽  
Low K

AbstractUltra low dielectric constant (κ) material is needed as the inter-metal dielectrics to reduce RC delay when device dimension is scaled to sub-100nm. Porous dielectric films have been considered as good candidates for the application as inter-metal dielectrics due to their ultra low-k properties. Identifying proper dielectric copper diffusion barrier on the porous low-k films is critical for the low-k/Cu damascene fabrication process. In this study, we have evaluated the compatibility of plasma-deposited amorphous Boron Nitride film as a dielectrics copper diffusion barrier on a MSQ-based porous low-k LKD5109 film (from JSR). Both microwave plasma enhanced CVD (2.45 GHz) and radio-frequency plasma enhanced CVD (13.56 MHz) were applied for the BN deposition in order to evaluate the compatibility of the two plasma processes with the porous film. Growth parameters were optimized to minimize the boron diffusion and carbon depletion in the porous low-k films, which were found to have deleterious effects on the dielectric properties of the low-k films. FTIR and micro-Raman were employed for analyzing the changes in chemical structure of the low-k films after BN growth. Capacitance-voltage measurement was used to characterize the dielectric constants of BN film on Si and the BN-deposited porous low-k film. SIMS characterization was carried out to evaluate the performance of the BN film against copper diffusion.

Influence of the sidewall diffusion barrier on the transport properties of advanced Cu/low-k interconnects

2005 ◽  
Vol 82 (3-4) ◽  
pp. 374-379 ◽  
Author(s):  
Cyril Guedj ◽  
Jean-Frédéric Guillaumond ◽  
Lucile Arnaud ◽  
Vincent Arnal ◽  
Mohamed Aimadeddine ◽  
...  
Keyword(s):  
Transport Properties ◽  
Diffusion Barrier ◽  
Low K

Plasma Enhanced Chemical Vapor Deposition of Manganese on Low-k Dielectrics for Copper Diffusion Barrier Application

2012 ◽  
Vol 2 (3) ◽  
pp. P25-P27 ◽  
Author(s):  
N. Jourdan ◽  
Y. Barbarin ◽  
K. Croes ◽  
Y. Kong Siew ◽  
S. Van Elshocht ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Diffusion Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Copper Diffusion ◽  
Low K

Self-forming AlOx layer as Cu diffusion barrier on porous low-k film

2010 ◽  
Vol 518 (6) ◽  
pp. 1648-1652 ◽  
Author(s):  
Dung-Ching Perng ◽  
Jia-Bin Yeh ◽  
Kuo-Chung Hsu ◽  
Shuo-Wen Tsai
Keyword(s):  
Diffusion Barrier ◽  
Cu Diffusion Barrier ◽  
Low K

Ultra thin CVD TiN layers as diffusion barrier films on porous low-k materials

2004 ◽  
Vol 76 (1-4) ◽  
pp. 82-88 ◽  
Author(s):  
J. Bonitz ◽  
S.E. Schulz ◽  
T. Gessner
Keyword(s):  
Diffusion Barrier ◽  
Barrier Films ◽  
Low K

Enhanced growth and Cu diffusion barrier properties of thermal ALD TaNC films in Cu/low-k interconnects

2013 ◽  
Vol 110 ◽  
pp. 29-34 ◽  
Author(s):  
Henry Wojcik ◽  
Christoph Hossbach ◽  
Christoph Kubasch ◽  
Patrick Verdonck ◽  
Yohan Barbarin ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Cu Diffusion Barrier ◽  
Low K

Potential of Cat-CVD deposited a-SiC:H as diffusion barrier layer on low-k HSQ films for ULSI

2006 ◽  
Vol 501 (1-2) ◽  
pp. 318-321 ◽  
Author(s):  
Sunil Kumar Singh ◽  
Alka A. Kumbhar ◽  
Mayur Kothari ◽  
R.O. Dusane
Keyword(s):  
Barrier Layer ◽  
Diffusion Barrier ◽  
Diffusion Barrier Layer ◽  
Low K
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