Leakage current and reliability evaluation of ultra-thin reoxidized nitride and comparison with silicon dioxides

2003 ◽  
Author(s):  
E.Y. Wu ◽  
R.-P. Vollertsen ◽  
R. Jarnmy ◽  
A. Strong ◽  
C. Radens
Keyword(s):  
Leakage Current ◽  
Reliability Evaluation

Reliability evaluation of substation control systems

1999 ◽  
Vol 146 (6) ◽  
pp. 626 ◽  
Author(s):  
L.R. Castro Ferreira ◽  
P.A. Crossley ◽  
J. Goody ◽  
R.N. Allan
Keyword(s):  
Control Systems ◽  
Reliability Evaluation

Reliability Evaluation for a Wet-Plated Electrode with a Al/Al2O3/Cu Insulated Metal Substrate

2013 ◽  
Vol 51 (7) ◽  
pp. 523-527 ◽  
Author(s):  
Su-Jeong Suh ◽  
Chang-Hyoung Lee ◽  
Young-Lae Cho ◽  
Hwa-Sun Park ◽  
Won-Pyo Lee ◽  
...  
Keyword(s):  
Reliability Evaluation ◽  
Metal Substrate

TMR Magnetic Sensor Array Module for Detecting Leakage Current in Lithium-ion Batteries

2017 ◽  
Vol 137 (8) ◽  
pp. 481-486
Author(s):  
Junichi Hayasaka ◽  
Kiwamu Shirakawa ◽  
Nobukiyo Kobayashi ◽  
Kenichi Arai ◽  
Nobuaki Otake ◽  
...  
Keyword(s):  
Lithium Ion Batteries ◽  
Leakage Current ◽  
Sensor Array ◽  
Lithium Ion ◽  
Magnetic Sensor

Relationship between Leakage Current and Pollution Deposits on the Surface of Polymeric Insulator

2010 ◽  
Vol 130 (11) ◽  
pp. 1037-1041 ◽  
Author(s):  
Takuma Miyake ◽  
Yuya Seo ◽  
Tatsuya Sakoda ◽  
Masahisa Otsubo
Keyword(s):  
Leakage Current

Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress

2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky
Keyword(s):  
Leakage Current ◽  
Electrical Performance ◽  
Constant Current ◽  
Continuous Increase ◽  
Current Stress ◽  
Thermal Oxide ◽  
Stress Induced Leakage Current ◽  
Boron Penetration ◽  
Soft Breakdown ◽  
Induced Defects

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.

A Hybrid Method for Distribution Substation Reliability Evaluation

2017 ◽  
Vol 12 (2) ◽  
pp. 142
Author(s):  
Hemakumar Reddy Galiveeti ◽  
Arup Kumar Goswami ◽  
Nalin B. Dev Choudhury
Keyword(s):  
Hybrid Method ◽  
Reliability Evaluation
Sign in / Sign up

Export Citation Format

Share Document