Impact of screening of latent defects at electrical test on the yield-reliability relation and application to burn-in elimination

Abstract This paper describes a methodology for correlating physical defect inspection/navigation systems with electrical bitmap data through the fabrication of artificial defects via reticle alterations or circuit modifications using an inline FIB. The methodology chosen consisted of altering decommissioned reticles to create defects resulting in both open and shorted circuits within areas of an AMD microprocessor cache. The reticles were subsequently scanned using a KLA SL300HR StarLight inspection system to confirm their location, while wafers processed on these reticles were scanned at several layers using standard inline metrology. Finally, the wafers were electrically tested, bitmapped, and physically deprocessed. All defect data was then analyzed and cross-correlated between each system, uncovering some important system deficiencies and learning opportunities. Data and images are included to support the significance and effectiveness of such a methodology.

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Rapid Failure Analysis of Low-Yielding Electrical Test Structures Using E-beam Physical and Voltage Contrast Inspection

ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2013p0494 ◽

2013 ◽

Author(s):

Oliver D. Patterson ◽

Deborah A. Ryan ◽

Xiaohu Tang ◽

Shuen Cheng Lei

Keyword(s):

Failure Analysis ◽

Defect Detection ◽

High Volume ◽

The Other ◽

Defect Inspection ◽

Electrical Test ◽

Detection Mode ◽

Rapid Generation ◽

Voltage Contrast ◽

Additional Support

Abstract In-line E-beam inspection may be used for rapid generation of failure analysis (FA) results for low yielding test structures. This approach provides a number of advantages: 1) It is much earlier than traditional FA, 2) de-processing isn’t required, and 3) a high volume of sites can be processed with the additional support of an in-line FIB. Both physical defect detection and voltage contrast inspection modes are useful for this application. Voltage contrast mode is necessary for isolation of buried defects and is the preferred approach for opens, because it is faster. Physical defect detection mode is generally necessary to locate shorts. The considerations in applying these inspection modes for rapid failure analysis are discussed in the context of two examples: one that lends itself to physical defect inspection and the other, more appropriately addressed with voltage contrast inspection.

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In-Line Defect to Bitmap Signature Correlation: A Shortcut to Physical FA Results

ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2000p0081 ◽

2000 ◽

Author(s):

Julie Segal ◽

Arman Sagatelian ◽

Bob Hodgkins ◽

Tom Ho ◽

Ben Chu ◽

...

Keyword(s):

Failure Analysis ◽

Integrated Circuit ◽

Failure Mechanisms ◽

Memory Devices ◽

Line Defect ◽

Yield Improvement ◽

Electrical Test ◽

Large Numbers ◽

Improvement Process ◽

Existing Data

Abstract Physical failure analysis (FA) of integrated circuit devices that fail electrical test is an important part of the yield improvement process. This article describes how the analysis of existing data from arrayed devices can be used to replace physical FA of some electrical test failures, and increase the value of physical FA results. The discussion is limited to pre-repair results. The key is to use classified bitmaps and determine which signature classification correlates to which type of in-line defect. Using this technique, physical failure mechanisms can be determined for large numbers of failures on a scale that would be unfeasible with de-processing and physical FA. If the bitmaps are classified, two-way correlation can be performed: in-line defect to bitmap failure, as well as bitmap signature to in-line defect. Results also demonstrate the value of analyzing memory devices failures, even those that can be repaired, to gain understanding of defect mechanisms.

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