Characterization of contact and via failure under short duration high pulsed current stress

2002 ◽  
Author(s):  
K. Banerjee ◽  
A. Amerasekera ◽  
G. Dixit ◽  
N. Cheung ◽  
Chenming Hu
Keyword(s):  
Short Duration ◽  
Pulsed Current ◽  
Current Stress ◽  
High Pulsed Current

Characterization of Solid Tin Target for Gas Discharges Produced EUV Plasmas

2007 ◽  
Vol 121-123 ◽  
pp. 885-888
Author(s):  
C.H. Zhang ◽  
S. Katsuki ◽  
J.G. Shi ◽  
H. Horita ◽  
T. Namihira ◽  
...  
Keyword(s):  
Electric Energy ◽  
Target Material ◽  
Pulsed Current ◽  
Gas Discharges ◽  
Pinch Plasma ◽  
Euv Emission ◽  
Pinhole Imaging ◽  
Background Gas ◽  
Z Pinch

In the development of our Z-pinch plasma EUV source, xenon (Xe) is used for the background gas discharges, and a solid tin (Sn) rod is used as target material due to its potential of high convention efficiency (CE) from input electric energy to EUV radiation [1, 2]. The Z-pinch plasma was driven by pulsed current with amplitude of 30 kA and pulse duration of 110 ns. Pinhole imaging, EUV spectrograph and in-band EUV energy monitor were used to characterize the EUV emission from the Z-pinch discharge. The experimental analyses have demonstrated the CE was as high as 3% [3].

Characterization of CL-20 Explosive for Short Duration Shock Initiation

2019 ◽  
Author(s):  
Shallu Gupta ◽  
Deepika Jindal ◽  
Pushpa Gupta ◽  
Pal Dinesh Kumar ◽  
Arun Agarwal ◽  
...  
Keyword(s):  
Short Duration ◽  
Shock Initiation

Electroplasticity in AZ31B subjected to short-duration high-frequency pulsed current

2019 ◽  
Vol 125 (18) ◽  
pp. 185104 ◽  
Author(s):  
Jingyi Zhao ◽  
Zhencheng Ren ◽  
Hao Zhang ◽  
Guo-Xiang Wang ◽  
Yalin Dong ◽  
...  
Keyword(s):  
Short Duration ◽  
High Frequency ◽  
Pulsed Current

scholarly journals High pulsed current densityβ-Ga2O3MOSFETs verified by an analytical model corrected for interface charge

2017 ◽  
Vol 110 (14) ◽  
pp. 143505 ◽  
Author(s):  
Neil A. Moser ◽  
Jonathan P. McCandless ◽  
Antonio Crespo ◽  
Kevin D. Leedy ◽  
Andrew J. Green ◽  
...  
Keyword(s):  
Analytical Model ◽  
Pulsed Current ◽  
Interface Charge ◽  
High Pulsed Current

High pulsed current and voltage measurements on sintered BiPbSrCaCuO ceramics superconductors

1997 ◽  
Vol 282-287 ◽  
pp. 2625-2626 ◽  
Author(s):  
J.G. Noudem ◽  
L. Porcar ◽  
O. Belmont ◽  
D. Bourgault ◽  
J.M. Barbut ◽  
...  
Keyword(s):  
Pulsed Current ◽  
High Pulsed Current

Effects of Pulsed and DC Body-Diode Current Stress on the Stability of 1200-V SiC MOSFET I-V Characteristics

2020 ◽  
Vol 1004 ◽  
pp. 1027-1032
Author(s):  
Ronald Green ◽  
Aivars J. Lelis ◽  
Franklin L. Nouketcha
Keyword(s):  
Stacking Faults ◽  
Product Line ◽  
The Body ◽  
Pulsed Current ◽  
Forward Voltage ◽  
Power Mosfets ◽  
Current Stress ◽  
Device Processing ◽  
The Stability ◽  
Diode Current

1,200-V and 1,700-V SiC power MOSFETs from multiple suppliers were subject to dc and pulsed-current stress of the body-diode. Three of the five suppliers of 1,200-V devices evaluated showed no significant bipolar degradation, but the other two supplier’s devices showed varying degrees of degradation due this bipolar phenomenon. Electrical results of newly released 1,700-V devices from two suppliers showed significant degradation in the body-diode and MOSFET I-V characteristics following both dc and pulsed-current stress of their body-diodes. The electrical results presented in this work are consistent with basal plane dislocations (BPDs) that form stacking faults during forward conduction of the body-diode. Significant drift in the body-diode forward voltage and MOSFET on-resistance indicates that a much higher BPD density may be present in 1,700-V devices in comparison to the more mature 1,200-V device offerings. The likely presence of BPDs can lead to significant reliability issues in some modern SiC power MOSFETs, and their distribution seems to vary across suppliers and among devices with the same rating and from the same supplier. These differences are likely due to variations in wafer and device processing among suppliers and within a given product line from a single supplier.

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