Device degradation due to stud bumping above the MOSFET region and the effect of annealing on the degradation

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual ◽

10.1109/relphy.1997.584247 ◽

2002 ◽

Cited By ~ 1

Author(s):

N. Shimoyama ◽

K. Machida ◽

M. Shimaya ◽

H. Akiya ◽

H. Kyuragi

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