Comparison of single event transients in AlGaN/GaN Schottky-gate and MIS-gate HEMTs using single-photon absorption and focused X-ray techniques

2016 ◽  
Author(s):  
Ani Khachatrian ◽  
Nicolas J-H. Roche ◽  
Stephen P. Buchner ◽  
Andrew D. Koehler ◽  
Travis J. Anderson ◽  
...  
Keyword(s):  
Single Photon ◽  
Photon Absorption ◽  
Single Event ◽  
X Ray ◽  
Single Event Transients ◽  
Single Photon Absorption

Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique

2016 ◽  
Vol 63 (4) ◽  
pp. 1995-2001 ◽  
Author(s):  
Ani Khachatrian ◽  
Nicolas J-H. Roche ◽  
Stephen P. Buchner ◽  
Andrew D. Koehler ◽  
Jordan D. Greenlee ◽  
...  
Keyword(s):  
Single Photon ◽  
Photon Absorption ◽  
Spatial Mapping ◽  
Single Event ◽  
Single Event Transient ◽  
Transient Technique ◽  
Gan Hemts ◽  
Single Photon Absorption

Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption

2021 ◽  
pp. 1-1
Author(s):  
George N. Tzintzarov ◽  
Adrian Ildefonso ◽  
Jeffrey W. Teng ◽  
Milad Frounchi ◽  
Albert Djikeng ◽  
...  
Keyword(s):  
Photon Absorption ◽  
Single Event ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Single Event Transients ◽  
Silicon Photonic ◽  
Photonic Waveguides

scholarly journals Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam

2020 ◽  
Vol 67 (1) ◽  
pp. 91-98
Author(s):  
Delgermaa Nergui ◽  
Adrian Ildefonso ◽  
George N. Tzintzarov ◽  
Nelson E. Lourenco ◽  
Anup P. Omprakash ◽  
...  
Keyword(s):  
Single Event ◽  
X Ray ◽  
Single Event Transients

scholarly journals Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption

2016 ◽  
Vol 858 ◽  
pp. 245-248 ◽  
Author(s):  
Hassan Hamad ◽  
Christophe Raynaud ◽  
Pascal Bevilacqua ◽  
Sigo Scharnholz ◽  
Bertrand Vergne ◽  
...  
Keyword(s):  
Single Photon ◽  
Green Laser ◽  
Photon Absorption ◽  
Absorption Process ◽  
Field Range ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Avalanche Diodes ◽  
Single Photon Absorption ◽  
Ionization Rates

Optical Beam Induced Current (OBIC) measurements are performed on 4H-SiC avalanche diodes with a very thin and a highly doped active region. A pulsed green laser, with a wavelength of 532 nm, illuminates a reverse biased diode leading to generate electron-hole pairs in the space charge region. Comparison between the 4H-SiC bandgap and the incident photon energy shows that single photon absorption process can be neglected and two-photon absorption process dominates in this case. Ionization rates are then extracted from multiplication curve in a high electric field range (3 to 5 MV.cm–1). Results are in good agreement with previous ones obtained on the same diodes using single photon absorption process.

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