scholarly journals In-situ characterization of the amorphous to microcrystalline transition in hot wire CVD growth of Si:H using real time spectroscopic ellipsometry

Author(s):  
D.H. Levi ◽  
B.P. Nelson ◽  
J.D. Perkins ◽  
H.R. Moutinho
1991 ◽  
Vol 138 (11) ◽  
pp. 3266-3275 ◽  
Author(s):  
Y. ‐T. Kim ◽  
R. W. Collins ◽  
K. Vedam ◽  
D. L. Allara

1989 ◽  
Vol 158 ◽  
Author(s):  
R. Scarmozzino ◽  
T. Cacouris ◽  
R.M. Osgood

ABSTRACTIn situ measurement of resistance has been used for the realtime monitoring of metallorganic chemical vapor deposition (CVD) growth characteristics. In particular, a novel technique for measuring metallorganic CVD activation energies is presented. The micron scale geometry of the experiment makes it relevant to work in localized laser CVD. The technique has been used to measure the CVD activation energy of dimethylaluminum hydride (DMAlH). In addition, a variant of the technique has been used to study the growth stage of a resistless two-step metallization process (nucleation / selective CVD) employing DMAIH as the source gas in both steps.


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