Parallel operation of power transistors in switching amplifiers

1983 ◽  
Vol 71 (12) ◽  
pp. 1456-1457 ◽  
Author(s):  
M. Kazimierczuk
Keyword(s):  
Parallel Operation ◽  
Power Transistors ◽  
Switching Amplifiers

PARALLEL OPERATION OF TWO SLIDEREACTOR BIOREACTOR SYSTEMS – A TOOL FOR HYPOTHESIS DRIVEN HEPATOCYTE CULTURE EXPERIMENTS

2008 ◽  
Vol 46 (01) ◽  
Author(s):  
N Billecke ◽  
N Raschzok ◽  
H Morgul ◽  
C Leist ◽  
K Schmitt ◽  
...  
Keyword(s):  
Hepatocyte Culture ◽  
Parallel Operation

Biogas Production Using Anaerobic Digestion of Industrial Waste

2016 ◽  
Vol 832 ◽  
pp. 55-62
Author(s):  
Ján Gaduš ◽  
Tomáš Giertl ◽  
Viera Kažimírová
Keyword(s):  
Anaerobic Digestion ◽  
Industrial Waste ◽  
Large Scale ◽  
Biogas Production ◽  
Biogas Plant ◽  
Parallel Operation ◽  
Paper Production ◽  
Biochemical Conversion ◽  
Mixed Biomass ◽  
Economic Balance

In the paper experiments and theory of biogas production using industrial waste from paper production as a co-substrate are described. The main aim of the experiments was to evaluate the sensitivity and applicability of the biochemical conversion using the anaerobic digestion of the mixed biomass in the pilot fermentor (5 m3), where the mesophillic temperature was maintained. It was in parallel operation with a large scale fermentor (100 m3). The research was carried out at the biogas plant in Kolíňany, which is a demonstration facility of the Slovak University of Agriculture in Nitra. The experiments proved that the waste arising from the paper production can be used in case of its appropriate dosing as an input substrate for biogas production, and thus it can improve the economic balance of the biogas plant.

scholarly journals Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2316
Author(s):  
Kalparupa Mukherjee ◽  
Carlo De Santi ◽  
Matteo Borga ◽  
Karen Geens ◽  
Shuzhen You ◽  
...  
Keyword(s):  
Field Effect Transistor ◽  
Dynamic Performance ◽  
Power Conversion ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Current Analysis ◽  
Power Transistors ◽  
Trench Structure ◽  
Effect Transistor ◽  
Gan On Si

The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the development of efficient GaN-based power transistors on foreign substrates for power conversion applications. This work presents an overview of recent case studies, to discuss the most relevant challenges related to the development of reliable vertical GaN-on-Si trench MOSFETs. The focus lies on strategies to identify and tackle the most relevant reliability issues. First, we describe leakage and doping considerations, which must be considered to design vertical GaN-on-Si stacks with high breakdown voltage. Next, we describe gate design techniques to improve breakdown performance, through variation of dielectric composition coupled with optimization of the trench structure. Finally, we describe how to identify and compare trapping effects with the help of pulsed techniques, combined with light-assisted de-trapping analyses, in order to assess the dynamic performance of the devices.

Quasi-two-dimensional simulations of bipolar silicon power transistors

Physica B+C ◽  
1985 ◽  
Vol 129 (1-3) ◽  
pp. 337-341
Author(s):  
Wolf-Dieter Nowak ◽  
Heinrich Schlangenotto
Keyword(s):  
Two Dimensional ◽  
Power Transistors
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