High-efficiency operation of GaAs Schottky-barrier IMPATTs

1972 ◽  
Vol 60 (4) ◽  
pp. 464-465 ◽  
Author(s):  
Ho-Chung Huang ◽  
P.A. Levine ◽  
A.R. Gobat ◽  
J.B. Klatskin
Keyword(s):  
Schottky Barrier ◽  
High Efficiency

High efficiency GaAs Schottky-barrier gate f.e.t. oscillator

1980 ◽  
Vol 16 (13) ◽  
pp. 490
Author(s):  
J.F. Sautereau ◽  
J. Graffeuil ◽  
K. Tantrarongroj ◽  
P. Rossel
Keyword(s):  
Schottky Barrier ◽  
High Efficiency

scholarly journals Thinning ferroelectric films for high-efficiency photovoltaics based on the Schottky barrier effect

2019 ◽  
Vol 11 (1) ◽  
Author(s):  
Zhengwei Tan ◽  
Lanqing Hong ◽  
Zhen Fan ◽  
Junjiang Tian ◽  
Luyong Zhang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Efficiency ◽  
Barrier Effect ◽  
Ferroelectric Films

High efficiency graphene/MoS 2 /Si Schottky barrier solar cells using layer-controlled MoS 2 films

Solar Energy ◽  
2018 ◽  
Vol 160 ◽  
pp. 76-84 ◽  
Author(s):  
Jun Ma ◽  
He Bai ◽  
Wei Zhao ◽  
Yujie Yuan ◽  
Kailiang Zhang
Keyword(s):  
Solar Cells ◽  
Schottky Barrier ◽  
High Efficiency

High power and high efficiency GaN HEMT with WN Schottky barrier

2012 ◽  
Author(s):  
Tangsheng Chen ◽  
Jianjun Zhou ◽  
Chunjiang Ren ◽  
Zhonghui Li ◽  
Shichang Zhong ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Power ◽  
High Efficiency ◽  
Gan Hemt

X-band performance of high efficiency GaAs Schottky barrier IMPATT diodes

1973 ◽  
Vol 20 (12) ◽  
pp. 1178-1178
Author(s):  
W.R. Wisseman ◽  
D.W. Shaw ◽  
R.L. Adams ◽  
T.E. Hasty
Keyword(s):  
Schottky Barrier ◽  
High Efficiency ◽  
X Band ◽  
Impatt Diodes

Role of Interfacial Oxide in High-Efficiency Graphene–Silicon Schottky Barrier Solar Cells

Nano Letters ◽  
2015 ◽  
Vol 15 (3) ◽  
pp. 2104-2110 ◽  
Author(s):  
Yi Song ◽  
Xinming Li ◽  
Charles Mackin ◽  
Xu Zhang ◽  
Wenjing Fang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Schottky Barrier ◽  
High Efficiency

Spin-dependent electron transport in ferromagnet/semiconductor Schottky barrier structures

2000 ◽  
Vol 614 ◽  
Author(s):  
Atsufumi Hirohata ◽  
Yong-Bing Xu ◽  
Christian M. Guertler ◽  
J. Anthony ◽  
C. Bland ◽  
...  
Keyword(s):  
Electron Transport ◽  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
High Efficiency ◽  
Electron Tunneling ◽  
Spin Injection ◽  
Polarized Light ◽  
Film Plane ◽  
Circularly Polarized Light ◽  
Spin Polarized

ABSTRACTClear evidence for high efficiency spin-polarized electron transport across ferromagnet/semiconductor Schottky barrier interfaces was observed in Ni80Fe20/GaAs structures. Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane. At negative bias, an almost constant difference between the helicity-dependent photocurrent obtained for the magnetization parallel and perpendicular to the photon helicity was detected. An effective asymmetry, A, was also estimated from the helicity-dependent photocurrent difference, attributed to spin-polarized electron tunneling from GaAs to NiFe (spin filtering). A decreases with increasing photon energy, which is consistent with the energy-dependence of the asymmetry of photoexcited electrons in GaAs. Weak spin injection from NiFe to GaAs was seen at a bias corresponding to the Schottky barrier height, which is likely to occur via a ballistic process.

scholarly journals Theoretical study of a high-efficiency GaP–Si heterojunction betavoltaic cell compared with metal–Si Schottky barrier betavoltaic cell

AIP Advances ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 065110
Author(s):  
Yu Wang ◽  
Jingbin Lu ◽  
Renzhou Zheng ◽  
Xiaoyi Li ◽  
Yumin Liu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Efficiency ◽  
Theoretical Study ◽  
Betavoltaic Cell ◽  
Efficiency Gap
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