scholarly journals Characterization of intra-bandgap defect states through leakage current analysis for optimization of 4H-SiC photoconductive switches

2015 ◽  
Author(s):  
David Thomas ◽  
Daniel Mauch ◽  
J. Dickens ◽  
A. Neuber
Keyword(s):  
Leakage Current ◽  
Current Analysis ◽  
Defect States ◽  
Photoconductive Switches

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

Electrical characterization of deep defect states in Galliumnitride co-implanted with magnesium and sulfur ions

2002 ◽  
Vol 93 (1-3) ◽  
pp. 85-89 ◽  
Author(s):  
A Krtschil ◽  
A Kielburg ◽  
H Witte ◽  
A Krost ◽  
J Christen ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Defect States ◽  
Deep Defect

Fabrication and Characterization of Ferroelectric Polymer/TiO2/Al-doped ZnO Structures

2008 ◽  
Vol 1071 ◽  
Author(s):  
Koji Aizawa
Keyword(s):  
Leakage Current ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Tio2 Films ◽  
Gate Leakage Current ◽  
Poly Vinylidene Fluoride ◽  
Doped Zno ◽  
Fabrication And Characterization

AbstractCharacterization of 700-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/TiO2/Al-doped ZnO (AZO) structures on a glass substrate were investigated. In this study, the sputtered TiO2 films as insulator were used for the reduction of leakage current. The leakage current density of the fabricated Pt/P(VDF/TrFE)/AZO and Pt/P(VDF/TrFE)/170-nm-thick TiO2/AZO structures were approximately 8.7 and 3.9 nA/cm2 at the applied voltage of 10 V, respectively. In the polarization vs. voltage characteristics, the fabricated Pt/P(VDF/TrFE)/TiO2/AZO structures showed hysteresis loops caused by ferroelectric polarization. The remnant polarization (2Pr) and coercive voltage (2Vc) measured from a saturated hysteresis loop at the frequency of 50 Hz were approximately 12 μC/cm2 and 105 V, respectively. These results suggest that the insertion of TiO2 film is available for reducing the gate leakage current without changing the ferroelectric properties.

Capacitance and Current Deep-Level Transient Fourier Spectroscopy (DLTFS) for the Characterization of Defect States in Mg-Doped GaN-on-Si p+n Diodes

2021 ◽  
Vol MA2021-01 (34) ◽  
pp. 2043-2043
Author(s):  
Yoann Lechaux ◽  
Albert Minj ◽  
Laurence Méchin ◽  
Hu Liang ◽  
Karen Geens ◽  
...  
Keyword(s):  
Deep Level ◽  
Fourier Spectroscopy ◽  
Defect States ◽  
Gan On Si ◽  
Mg Doped
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