scholarly journals Silicon-based III-V quantum dot devices for silicon photonics

Author(s):  
Mingchu Tang ◽  
Siming Chen ◽  
Jiang Wu ◽  
Mengya Liao ◽  
Huiyun Liu
Author(s):  
Jiang Wu ◽  
Siming Chen ◽  
Mingchu Tang ◽  
Mengya Liao ◽  
Huiyun Liu

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1646
Author(s):  
Jingya Xie ◽  
Wangcheng Ye ◽  
Linjie Zhou ◽  
Xuguang Guo ◽  
Xiaofei Zang ◽  
...  

In the last couple of decades, terahertz (THz) technologies, which lie in the frequency gap between the infrared and microwaves, have been greatly enhanced and investigated due to possible opportunities in a plethora of THz applications, such as imaging, security, and wireless communications. Photonics has led the way to the generation, modulation, and detection of THz waves such as the photomixing technique. In tandem with these investigations, researchers have been exploring ways to use silicon photonics technologies for THz applications to leverage the cost-effective large-scale fabrication and integration opportunities that it would enable. Although silicon photonics has enabled the implementation of a large number of optical components for practical use, for THz integrated systems, we still face several challenges associated with high-quality hybrid silicon lasers, conversion efficiency, device integration, and fabrication. This paper provides an overview of recent progress in THz technologies based on silicon photonics or hybrid silicon photonics, including THz generation, detection, phase modulation, intensity modulation, and passive components. As silicon-based electronic and photonic circuits are further approaching THz frequencies, one single chip with electronics, photonics, and THz functions seems inevitable, resulting in the ultimate dream of a THz electronic–photonic integrated circuit.


2020 ◽  
Vol 13 (1) ◽  
pp. 62-74
Author(s):  
朱晓秀 ZHU Xiao-xiu ◽  
葛 咏 GE Yong ◽  
李建军 LI Jian-jun ◽  
赵跃进 ZHAO Yue-jin ◽  
邹炳锁 ZOU Bing-suo ◽  
...  

2016 ◽  
Vol 24 (14) ◽  
pp. 16167 ◽  
Author(s):  
Géza Kurczveil ◽  
Di Liang ◽  
Marco Fiorentino ◽  
Raymond G. Beausoleil

2015 ◽  
Vol 1 (4) ◽  
pp. e1500214 ◽  
Author(s):  
Kevin Eng ◽  
Thaddeus D. Ladd ◽  
Aaron Smith ◽  
Matthew G. Borselli ◽  
Andrey A. Kiselev ◽  
...  

Like modern microprocessors today, future processors of quantum information may be implemented using all-electrical control of silicon-based devices. A semiconductor spin qubit may be controlled without the use of magnetic fields by using three electrons in three tunnel-coupled quantum dots. Triple dots have previously been implemented in GaAs, but this material suffers from intrinsic nuclear magnetic noise. Reduction of this noise is possible by fabricating devices using isotopically purified silicon. We demonstrate universal coherent control of a triple-quantum-dot qubit implemented in an isotopically enhanced Si/SiGe heterostructure. Composite pulses are used to implement spin-echo type sequences, and differential charge sensing enables single-shot state readout. These experiments demonstrate sufficient control with sufficiently low noise to enable the long pulse sequences required for exchange-only two-qubit logic and randomized benchmarking.


2017 ◽  
Vol 77 (3) ◽  
pp. 1-8 ◽  
Author(s):  
Vladimir Svrcek ◽  
Tamil Velusamy ◽  
Mickael Lozach ◽  
Connor Rocks ◽  
Calum McDonald ◽  
...  

2011 ◽  
Vol 6 (01) ◽  
pp. C01027-C01027 ◽  
Author(s):  
M Urdaneta ◽  
P Stepanov ◽  
I N Weinberg ◽  
I Pala ◽  
S Brock

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