Mining relations and physical grouping of building-embedded sensors and actuators

2015 ◽  
Author(s):  
Luis I. Lopera Gonzalez ◽  
Oliver Amft
Keyword(s):  
Embedded Sensors ◽  
Sensors And Actuators

Development of semianalytical axisymmetric shell models with embedded sensors and actuators

1999 ◽  
Vol 47 (1-4) ◽  
pp. 531-541 ◽  
Author(s):  
I.F. Pinto Correia ◽  
C.M. Mota Soares ◽  
C.A. Mota Soares ◽  
J. Herskovits
Keyword(s):  
Embedded Sensors ◽  
Sensors And Actuators ◽  
Axisymmetric Shell ◽  
Shell Models

scholarly journals A review on the internet of things in civil engineering: enabling technologies, applications and challenges

2021 ◽  
Vol 309 ◽  
pp. 01209
Author(s):  
Manisha Gunturi
Keyword(s):  
Internet Of Things ◽  
Civil Engineering ◽  
New Technology ◽  
Embedded Sensors ◽  
Smart Devices ◽  
The Internet ◽  
Sensors And Actuators ◽  
Sustainable Infrastructure ◽  
The Status ◽  
The Internet Of Things

The new technology and concepts of IoT is gaining a lot of interest in the recent years. This technology aims at improving the\ quality and productivity in various domains. The Internet of Things (IoT) is about the use of sensors and smart devices and to utilize data collected by these embedded sensors and actuators for automation. The technology has proven its significance in many domains and is successfully being used in the various fields of civil engineering. The application of the IoT is paving its way towards smart and sustainable infrastructure. This paper proposes to contemplate the status of usage of IoT in Civil Engineering, its issues and difficulties.

Investigation of ferroelectrics using conventional and in situ electron microscopy

1994 ◽  
Vol 52 ◽  
pp. 586-587
Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Nonvolatile Memory ◽  
Ferroelectric Materials ◽  
Gate Insulator ◽  
Sensors And Actuators ◽  
In Situ Electron Microscopy ◽  
Ferroelectric Domains ◽  
Domain Boundaries ◽  
Domain Interactions ◽  
Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

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