Dual polarization in-phase and quadrature high speed submarine transmission with only two photodiodes, ADCs, MZMs and DACs

2017 ◽  
Author(s):  
Rafael Rios-Muller ◽  
José Estaran ◽  
Jeremie Renaudier ◽  
Gabriel Charlet
Keyword(s):  
High Speed ◽  
Dual Polarization

Application of a Novel Modulation Scheme of PS-RZ-QPSK Signal in High-Speed Optical Transmission System

2013 ◽  
Vol 347-350 ◽  
pp. 1879-1883
Author(s):  
Lei Xu ◽  
Jin Nan Zhang ◽  
Yan Gan Zhang ◽  
Mi Lin
Keyword(s):  
Phase Shift ◽  
High Speed ◽  
Optical Transmission ◽  
Modulation Scheme ◽  
Phase Shift Keying ◽  
Transmission Performance ◽  
Dual Polarization ◽  
Traditional Structure ◽  
Shift Keying ◽  
Mach Zehnder Modulator

Modulation principle of dual-polarization quadratu-re phase shift keying signal and polarization-switched QPSK signal are demonstrated and advantages of PS-QPSK are proved in theoretically. A novel modulation scheme of PS-RZ-QPSK signal is proposed in this paper. The scheme reduces transmitter cost by less use of Mach-Zehnder modulator, but also presents similar performance as traditional structure for PS-RZ-QPSK. The simulate result indicates PS-RZ-QPSK can achieve a better transmission performance than DP-RZ-QPSK at the same bit rate (84Gb/s) and baud rate (28GBd), and proves showing the feasibility of novel modulation scheme.

Dual-carrier Dual-polarization IQ Modulator Driven with High-speed DACs for 400-Gb/s Applications

2012 ◽  
Author(s):  
Hiroshi Yamazaki ◽  
Takashi Goh ◽  
Takashi Saida ◽  
Yasuaki Hashizume ◽  
Shinji Mino ◽  
...  
Keyword(s):  
High Speed ◽  
Dual Polarization ◽  
Iq Modulator

Parallel Directional Coupler based Dual-Polarization Electro-Absorption Modulator using Epsilon Near-Zero Material

2021 ◽  
Author(s):  
Tanmay Bhowmik ◽  
Debabrata Sikdar
Keyword(s):  
Indium Tin Oxide ◽  
High Speed ◽  
Directional Coupler ◽  
Modulation Depth ◽  
Extinction Ratio ◽  
Integrated Photonics ◽  
Dual Polarization ◽  
Active Length ◽  
Te Mode ◽  
Epsilon Near Zero

Abstract Electro–optical modulation, where a radio frequency signal can be encoded in an optical field, is crucial to decide the overall performance of an integrated photonics system. Due to the growing internet penetration rate worldwide, polarization-division-multiplexing (PDM) technique has emerged to increase the link capacity, where polarization-independent modulators are desirable to reduce system complexity. In this study, we propose a novel parallel directional coupler based dual-polarization electro-absorption modulator based on epsilon-near-zero (ENZ) material. The proposed design is capable of independent and synchronized modulation of two fundamental modes viz. transverse magnetic (TM) and transverse electric (TE) mode of a standard silicon rib waveguide. Indium-tin-oxide (ITO)–Silicon based two parallel hybrid plasmonic waveguides (HPW1 and HPW2) are placed such that fundamental TM (TE) mode of the input bus waveguide can be coupled to HPW1 (HPW2). The ENZ-state of ITO, acquired upon two independent electrical gating, enables large modulation depth by utilizing enhancement of electric field at the absorptive carrier accumulation layer. With a 27 μm active length, the extinction ratio (ER) of the proposed design is 10.11 dB (9.66 dB) for TM (TE) modulation at 1550 nm wavelength. This results in a 0.45 dB ER-discrepancy and indicates the polarization-insensitive nature of the modulator. The insertion losses and modulation bandwidths of our design are less than 1 dB and more than 100 GHz, respectively, for both polarizations over the entire C-band of wavelength. The proposed design can find potential applications in the PDM-enabled integrated photonics systems and high speed optical interconnections at data center networks.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

Vacuum System to Minimize the Specimen Contamination of High-Performance EM

1977 ◽  
Vol 35 ◽  
pp. 68-69
Author(s):  
N. Yoshimura ◽  
K. Shirota ◽  
T. Etoh
Keyword(s):  
Electron Microscope ◽  
High Speed ◽  
High Performance ◽  
High Vacuum ◽  
Vacuum System ◽  
Pump System ◽  
Pumping System ◽  
Diffusion Pump ◽  
Almost All ◽  
Cascade Type

One of the most important requirements for a high-performance EM, especially an analytical EM using a fine beam probe, is to prevent specimen contamination by providing a clean high vacuum in the vicinity of the specimen. However, in almost all commercial EMs, the pressure in the vicinity of the specimen under observation is usually more than ten times higher than the pressure measured at the punping line. The EM column inevitably requires the use of greased Viton O-rings for fine movement, and specimens and films need to be exchanged frequently and several attachments may also be exchanged. For these reasons, a high speed pumping system, as well as a clean vacuum system, is now required. A newly developed electron microscope, the JEM-100CX features clean high vacuum in the vicinity of the specimen, realized by the use of a CASCADE type diffusion pump system which has been essentially improved over its predeces- sorD employed on the JEM-100C.

The on-line use of histogram data for high-speed correction and alignment of electron microscope images

1984 ◽  
Vol 42 ◽  
pp. 556-557
Author(s):  
William Krakow
Keyword(s):  
Power Spectrum ◽  
High Speed ◽  
Direct Memory Access ◽  
Digital Television ◽  
Contrast Transfer Function ◽  
The Past ◽  
High Resolution Tem ◽  
On Line ◽  
Correction Of Astigmatism ◽  
The Fourier Transform

In the past few years on-line digital television frame store devices coupled to computers have been employed to attempt to measure the microscope parameters of defocus and astigmatism. The ultimate goal of such tasks is to fully adjust the operating parameters of the microscope and obtain an optimum image for viewing in terms of its information content. The initial approach to this problem, for high resolution TEM imaging, was to obtain the power spectrum from the Fourier transform of an image, find the contrast transfer function oscillation maxima, and subsequently correct the image. This technique requires a fast computer, a direct memory access device and even an array processor to accomplish these tasks on limited size arrays in a few seconds per image. It is not clear that the power spectrum could be used for more than defocus correction since the correction of astigmatism is a formidable problem of pattern recognition.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

An atomic-resolution microscope study of Al contracts on GaAs

1986 ◽  
Vol 44 ◽  
pp. 726-727
Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
High Speed ◽  
Schottky Contacts ◽  
Detailed Knowledge ◽  
The Past ◽  
Semiconductor Interfaces ◽  
Deposited Metal ◽  
Microwave Applications ◽  
Free Interfaces ◽  
Potential Use

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

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