scholarly journals Numerical study of coulomb scattering effects on electron beam from a nano-tip

2007 ◽  
Author(s):  
J. Qiang ◽  
J. Corlett ◽  
S. Lidia ◽  
H. A. Padmore ◽  
W. Wan ◽  
...  
Keyword(s):  
Electron Beam ◽  
Numerical Study ◽  
Coulomb Scattering ◽  
Scattering Effects

SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps

2007 ◽  
Vol 556-557 ◽  
pp. 835-838 ◽  
Author(s):  
Amador Pérez-Tomás ◽  
Michael R. Jennings ◽  
Philip A. Mawby ◽  
James A. Covington ◽  
Phillippe Godignon ◽  
...  
Keyword(s):  
Degradation Mechanism ◽  
Mobility Model ◽  
Effect Of Temperature ◽  
Coulomb Scattering ◽  
Interface Traps ◽  
Channel Mobility ◽  
Inversion Channel ◽  
Scattering Effects ◽  
Charge Concentration ◽  
Substrate Doping

In prior work we have proposed a mobility model for describing the mobility degradation observed in SiC MOSFET devices, suitable for being implemented into a commercial simulator, including Coulomb scattering effects at interface traps. In this paper, the effect of temperature and doping on the channel mobility has been modelled. The computation results suggest that the Coulomb scattering at charged interface traps is the dominant degradation mechanism. Simulations also show that a temperature increase implies an improvement in field-effect mobility since the inversion channel concentration increases and the trapped charge is reduced due to bandgap narrowing. In contrast, increasing the substrate impurity concentration further degrades the fieldeffect mobility since the inversion charge concentration decreases for a given gate bias. We have good agreement between the computational results and experimental mobility measurements.

Evaluation of Corrections for X-Ray Microanalysis in the ESEM

2001 ◽  
Vol 7 (S2) ◽  
pp. 698-699
Author(s):  
Robert A. Carlton ◽  
Charles E. Lyman ◽  
James E. Roberts ◽  
Raynald Gauvin
Keyword(s):  
Electron Beam ◽  
Vapor Pressure ◽  
Path Length ◽  
High Vacuum ◽  
Chamber Pressure ◽  
Environmental Scanning ◽  
X Ray ◽  
Scattering Effects ◽  
Beam Scattering ◽  
The Relationship

A number of methods have been proposed to correct for the electron beam scattering effects on xray microanalysis in the environmental scanning electron microscope (ESEM). This paper presents an evaluation of two of these methods. The Doehne method is based on the observation that x-ray counts due to the unscattered electron beam increase with decreasing chamber pressure whereas the inverse is true for x-ray counts due to scattered electrons. The x-ray count intercept, at zero pressure, of the regression lines relating x-ray counts to chamber vapor pressure is an estimate of the high-vacuum intensity. The Gauvin method is based on the relationship between x-ray counts and the fraction of the electron beam that is unscattered, fp.The fraction of the unscattered beam is calculated using an equation derived from scattering theory and uses the accelerating voltage, the gas path length, and the chamber vapor pressure.

Strong Coulomb scattering effects on low frequency noise in monolayer WS2field-effect transistors

2016 ◽  
Vol 109 (15) ◽  
pp. 153102 ◽  
Author(s):  
Min-Kyu Joo ◽  
Yoojoo Yun ◽  
Seokjoon Yun ◽  
Young Hee Lee ◽  
Dongseok Suh
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Coulomb Scattering ◽  
Low Frequency Noise ◽  
Scattering Effects ◽  
Strong Coulomb

Gas scattering effects and microstructural evaluation of electron beam evaporated titanium coatings in neon and argon at different gas pressures

Vacuum ◽  
2003 ◽  
Vol 72 (3) ◽  
pp. 225-232 ◽  
Author(s):  
J.C. Avelar-Batista ◽  
A.D. Wilson ◽  
A. Davison ◽  
A. Matthews ◽  
K.S. Fancey
Keyword(s):  
Electron Beam ◽  
Scattering Effects ◽  
Microstructural Evaluation ◽  
Titanium Coatings ◽  
Gas Pressures

Numerical study of relativistic electron‐beam electrostatic pumping by anode aperture

1993 ◽  
Vol 74 (5) ◽  
pp. 3052-3056 ◽  
Author(s):  
I. G. Yovchev ◽  
I. P. Spassovsky ◽  
N. A. Nikolov ◽  
K. G. Kostov ◽  
V. A. Spassov
Keyword(s):  
Electron Beam ◽  
Relativistic Electron ◽  
Relativistic Electron Beam ◽  
Numerical Study

Design studies for the next generation electron ion colliders

2014 ◽  
Vol 29 (09) ◽  
pp. 1450053
Author(s):  
Hisham Kamal Sayed ◽  
S. A. Bogacz ◽  
G. Krafft
Keyword(s):  
Electron Beam ◽  
Numerical Study ◽  
Polarization Vector ◽  
Beam Polarization ◽  
Straight Section ◽  
Next Generation ◽  
Interaction Point ◽  
Accelerator Facility ◽  
Electron Ring ◽  
Betatron Motion

The next generation Electron Ion Collider (EIC) at Thomas Jefferson National Accelerator Facility (JLAB) utilizes a figure-8 shaped ion and electron rings. EIC has the ability to preserve the ion polarization during acceleration, where the electron ring matches in footprint with a figure-8 ion ring. The electron ring is designed to deliver a highly polarized high luminous electron beam at interaction point (IP). The main challenges of the electron ring design are the chromaticity compensation and maintaining high beam polarization of 70% at all energies 3–11 GeV without introducing transverse orbital coupling before the IP. The very demanding detector design limits the minimum distance between the final focus quadrupole and the interaction point to 3.5 m which results in a large β function inside the final focus quadrupoles leading to increased beam chromaticity. In this paper, we present a novel chromaticity compensation scheme that mitigates IP chromaticity by a compact chromaticity compensation section with multipole magnet components. In addition, a set of spin rotators are utilized to manipulate the polarization vector of the electron beam in order to preserve the beam polarization. The spin rotator solenoids introduce undesired coupling between the horizontal and vertical betatron motion of the beam. We introduce a compact and modular orbit decoupling insert that can fit in the limited space of the straight section in the figure-8 ring. We show a numerical study of the figure-8 ring design with the compact straight section, which includes the interaction region, chromaticity compensation section, and the spin rotators, the figure-8 design performance is evaluated with particle tracking.

Sign in / Sign up

Export Citation Format

Share Document