scholarly journals Slow feedback loops for a Landau cavity with high beam loading

2003 ◽  
Author(s):  
N. Towne
Keyword(s):  
Feedback Loops ◽  
High Beam ◽  
Beam Loading

scholarly journals Control of Cavities with High Beam Loading

1985 ◽  
Vol 32 (5) ◽  
pp. 1852-1856 ◽  
Author(s):  
D. Boussard
Keyword(s):  
High Beam ◽  
Beam Loading

scholarly journals PLATEAU FORMATION ON ACCELERATING WAKEFIELD FOR ELECTRON-WITNESS-BUNCH AND ON DECELERATING WAKEFIELD FOR DRIVER-BUNCHES IN A PLASMA

2021 ◽  
pp. 52-56
Author(s):  
V.I. Maslov ◽  
R.T. Ovsiannikov ◽  
D.S. Bondar ◽  
I.P. Levchuk ◽  
I.N. Onishchenko
Keyword(s):  
High Efficiency ◽  
Beam Quality ◽  
High Beam ◽  
Beam Loading ◽  
Wakefield Acceleration ◽  
Plasma Wakefield Accelerators ◽  
Optimal Beam ◽  
Pic Code ◽  
Plasma Wakefield ◽  
Compact Sources

Plasma wakefield acceleration promises compact sources of high-brightness relativistic electron and positron beams. Applications (particle colliders and free-electron lasers) of plasma wakefield accelerators demand low ener-gy spread beams and high-efficiency operation. Achieving both requires plateau formation on both the accelerating field for witness-bunch and the decelerating fields for driver-bunches by controlled beam loading of the plasma wave with careful tailored current profiles. We demonstrate by numerical simulation by 2.5D PIC code LCODE such optimal beam loading in a linear and blowout electron-driven plasma accelerator with RF generated low and high beam charge and high beam quality.

scholarly journals Operation of the CEBAF linac with high beam loading

2002 ◽  
Author(s):  
L. Merminga ◽  
J.J. Bisognano ◽  
C. Hovater ◽  
G.A. Krafft ◽  
S.N. Simrock ◽  
...  
Keyword(s):  
High Beam ◽  
Beam Loading

LVSEM: Past Present and Future

1990 ◽  
Vol 48 (1) ◽  
pp. 364-365
Author(s):  
James B. Pawley
Keyword(s):  
Field Emission ◽  
Line Width ◽  
Time Scales ◽  
Silicon Oxide ◽  
Beam Current ◽  
High Brightness ◽  
High Beam ◽  
Fixed Charges ◽  
Beam Voltage ◽  
Deposited Metal

Past: In 1960 Thornley published the first description of SEM studies carried out at low beam voltage (LVSEM, 1-5 kV). The aim was to reduce charging on insulators but increased contrast and difficulties with low beam current and frozen biological specimens were also noted. These disadvantages prevented widespread use of LVSEM except by a few enthusiasts such as Boyde. An exception was its use in connection with studies in which biological specimens were dissected in the SEM as this process destroyed the conducting films and produced charging unless LVSEM was used.In the 1980’s field emission (FE) SEM’s came into more common use. The high brightness and smaller energy spread characteristic of the FE-SEM’s greatly reduced the practical resolution penalty associated with LVSEM and the number of investigators taking advantage of the technique rapidly expanded; led by those studying semiconductors. In semiconductor research, the SEM is used to measure the line-width of the deposited metal conductors and of the features of the photo-resist used to form them. In addition, the SEM is used to measure the surface potentials of operating circuits with sub-micrometer resolution and on pico-second time scales. Because high beam voltages destroy semiconductors by injecting fixed charges into silicon oxide insulators, these studies must be performed using LVSEM where the beam does not penetrate so far.

Rolle des HIF1-PHD Feedback Loops in der Leber: HIF1 ist kein absoluter Sauerstoffsensor sondern eine Stoffwechselkontrolle

2008 ◽  
Vol 46 (09) ◽  
Author(s):  
G Millonig ◽  
S Hegedüsch ◽  
L Becker ◽  
D Schuppan ◽  
HK Seitz ◽  
...  
Keyword(s):  
Feedback Loops

Laser Based Analysis on Analog Circuits with Feedback Loops and a Case Study

2006 ◽  
Author(s):  
Fubin Zhang ◽  
David Maxwell
Keyword(s):  
Success Rate ◽  
High Resistance ◽  
Analog Circuits ◽  
Analog Circuit ◽  
Feedback Loops ◽  
Induced Voltage ◽  
Analog Device ◽  
Analog Ic ◽  
Successful Isolation

Abstract Based on the understanding of laser based techniques’ physics theory and the topology/structure of analog circuit systems with feedback loops, the propagation of laser induced voltage/current alteration inside the analog IC is evaluated. A setup connection scheme is proposed to monitor this voltage/current alteration to achieve a better success rate in finding the fail site or defect. Finally, a case of successful isolation of a high resistance via on an analog device is presented.

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