Simulation of Active Regions of Semiconductor Lasers and Optical Amplifiers based on Quantum Wells

2007 ◽  
Author(s):  
O. Shulika
Keyword(s):  
Quantum Wells ◽  
Semiconductor Lasers ◽  
Optical Amplifiers ◽  
Active Regions

High-Power Mid-IR Interband Cascade Lasers Based on Type-II Heterostructures

1999 ◽  
Vol 607 ◽  
Author(s):  
Rui Q. Yang ◽  
J. D. Bruno ◽  
J. L. Bradshaw ◽  
J. T. Pham ◽  
D. E. Wortman
Keyword(s):  
Quantum Wells ◽  
Semiconductor Lasers ◽  
Power Efficiency ◽  
Active Regions ◽  
Light Sources ◽  
Type Ii ◽  
New Class ◽  
Optical Output ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

AbstractThe interband cascade lasers (IC) represent a new class of mid-IR light sources, which take advantage of the broken-gap alignment in type-II quantum wells to reuse electrons for sequential photon emissions from serially connected active regions. Here, we describe recent progress in InAs/GaInSb type-II IC lasers at emission wavelengths of 3.8-4 µm; these semiconductor lasers have exhibited significantly higher differential quantum efficiencies and peak powers than previously reported. Also, these lasers were able to operate at temperatures up to 217 K, which is higher than the previous record (182 K) for an IC laser at this wavelength. We observed from several devices at temperatures above 80 K a slope efficiency of ∼800 mW/A per facet, corresponding to a differential external quantum efficiency of /500%. A peak optical output power exceeding 4 W/facet and peak power efficiency of /7% were observed from a device at 80 K. Also, we report the first cw operation of IC lasers.

Guiding effect of quantum wells in semiconductor lasers

2013 ◽  
Vol 43 (5) ◽  
pp. 401-406 ◽  
Author(s):  
V Ya Aleshkin ◽  
Natalia V Dikareva ◽  
A A Dubinov ◽  
B N Zvonkov ◽  
Maria V Karzanova ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Semiconductor Lasers ◽  
Guiding Effect

scholarly journals Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers

2021 ◽  
Vol 11 (23) ◽  
pp. 11096
Author(s):  
Joan Manel Ramírez ◽  
Pierre Fanneau de la Horie ◽  
Jean-Guy Provost ◽  
Stéphane Malhouitre ◽  
Delphine Néel ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Networks ◽  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Optical Amplifier ◽  
Silicon On Insulator ◽  
Total Power ◽  
Multiple Quantum ◽  
Total Power Consumption ◽  
On Chip

Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint of 0.5 mm2, a lasing current threshold of 10 mA, a selectable wavelength tuning range of 50 nm centered at λ = 1549 nm, a fiber-coupled output power of 10 mW, and a laser linewidth of ν = 259 KHz. The SOA provides an on-chip gain of 18 dB/mm. The total power consumption of the co-integrated devices remains below 0.5 W even for the most power demanding lasing wavelengths. Apart from the above-mentioned applications, the co-integration of compact widely tunable III-V/Si lasers with on-chip SOAs provides a step forward towards the development of highly efficient, portable, and low power systems for wavelength division multiplexed passive optical networks (WDM-PONs).

The Growth of AIGaAs/GaAs Heterostructures By Atomic Layer Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
S. P. Denbaars ◽  
A. Hariz ◽  
C. Beyler ◽  
B. Y. Maa ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Active Regions ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
High Quality ◽  
Monolayer Growth ◽  
Low Threshold ◽  
Kinetics Of

ABSTRACTThe kinetics of atomic layer epitaxy (ALE) of GaAs utilizing trimethylgallium and arsine are described. The results show that saturated monolayer growth can be achieved-in the temperature range 445°C -485°C and that high quality materials can be grown.. Hybrid A1GaAs/GaAs heterostructures have been grown utilizing ALE for the active regions and conventional metalorganic chemical vapor deposition (MOCVD) for the confining regions that yield high quality quantum wells and low threshold quantum well lasers.

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