Electronic and optical properties on non-polar InGaN/GaN quantum-well structures

2007 ◽  
Author(s):  
S. H. Park ◽  
D. Kim ◽  
H. M. Kim ◽  
Y. T. Lee
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Quantum Well Structures ◽  
Electronic And Optical Properties

Electronic and Optical Properties of 1.55 µm GaInNAs/GaAs Quantum-Well Structures

2007 ◽  
Vol 46 (1) ◽  
pp. 152-155
Author(s):  
Seoung-Hwan Park ◽  
Hwa-Min Kim ◽  
Hae Geun Kim ◽  
Doyeol Ahn
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Quantum Well Structures ◽  
Electronic And Optical Properties

Electronic and Optical Properties of Bulk GaN and GaN/AlGaN Quantum Well Structures

1997 ◽  
Vol 468 ◽  
Author(s):  
M. Suzuki ◽  
T. Uenoyama
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Quantum Wells ◽  
Electronic Structures ◽  
Carrier Density ◽  
Uniaxial Strain ◽  
Crystal Symmetry ◽  
Quantum Well Structures ◽  
Electronic And Optical Properties ◽  
Bulk Gan

ABSTRACTElectronic structures and optical gains of bulk GaN and GaN/AlGaN quantum wells (QWs) are theoretically investigated for the wurtzite and the zincblende structures, using the k-p theory. It is found that the lower crystal symmetry, that is the wurtzite, is preferable for the lower threshold carrier density in the bulk. Although the QW structure leads to symmetry lowering only in the zincblende, we can not find a significant benefit of the zincblende QWs. As for the reduction of the threshold carrier density, biaxial strains are more effective in the zincblende. However, the threshold carrier density is still higher than in the wurtzite. It is proposed that the uniaxial strain in the c-plane of the wurtzite is more useful for reducing it.

Optical properties of GaBiAs single quantum well structures grown by MBE

2015 ◽  
Vol 30 (9) ◽  
pp. 094016 ◽  
Author(s):  
O Donmez ◽  
A Erol ◽  
M C Arikan ◽  
H Makhloufi ◽  
A Arnoult ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures
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