Photoluminescence of InGaAs islands on Si (111) substrate grown using micro-channel selective-area MOVPE

2012 ◽  
Author(s):  
Y. Fujimoto ◽  
A. Higo ◽  
J. O. Kjellman ◽  
S. Watanabe ◽  
M. Sugiyama ◽  
...  
Keyword(s):  
Micro Channel ◽  
Selective Area

Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal–Organic Vapor Phase Epitaxy

2010 ◽  
Vol 49 (12) ◽  
pp. 125601 ◽  
Author(s):  
Yoshiyuki Kondo ◽  
Momoko Deura ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi ◽  
Yoshiaki Nakano ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Micro Channel ◽  
Organic Vapor ◽  
Selective Area ◽  
Initial Nucleation ◽  
Metal Organic

Uniform InGaAs micro-discs on Si by micro-channel selective-area MOVPE

2009 ◽  
Author(s):  
M. Deura ◽  
T. Hoshii ◽  
M. Takenaka ◽  
S. Takagi ◽  
Y. Nakano ◽  
...  
Keyword(s):  
Micro Channel ◽  
Selective Area

Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE

2010 ◽  
Vol 312 (8) ◽  
pp. 1353-1358 ◽  
Author(s):  
Momoko Deura ◽  
Yoshiyuki Kondo ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi ◽  
Yoshiaki Nakano ◽  
...  
Keyword(s):  
Thin Layer ◽  
Micro Channel ◽  
Selective Area ◽  
Step Growth

Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si

2008 ◽  
Vol 310 (23) ◽  
pp. 4768-4771 ◽  
Author(s):  
Momoko Deura ◽  
Takuya Hoshii ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi ◽  
Yoshiaki Nakano ◽  
...  
Keyword(s):  
Micro Channel ◽  
Crystal Shape ◽  
Selective Area ◽  
Ga Content

Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy

2008 ◽  
Vol 2 (1) ◽  
pp. 011101 ◽  
Author(s):  
Momoko Deura ◽  
Takuya Hoshii ◽  
Takahisa Yamamoto ◽  
Yuichi Ikuhara ◽  
Mitsuru Takenaka ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Micro Channel ◽  
Selective Area

Atomic step-flow epitaxy of low defect InGaAs islands on Si(1 1 1) by micro-channel selective area MOVPE

2019 ◽  
Vol 507 ◽  
pp. 384-388
Author(s):  
Yufeng Fu ◽  
Nobuyuki Otake ◽  
Yoshihide Tachino ◽  
Tohma Watanabe ◽  
Masakazu Sugiyama
Keyword(s):  
Atomic Step ◽  
Micro Channel ◽  
Step Flow ◽  
Selective Area

Point and planar defects in the iron sulfide compounds Fe1-xS

1984 ◽  
Vol 42 ◽  
pp. 434-435
Author(s):  
Thao A. Nguyen
Keyword(s):  
Low Temperatures ◽  
Direct Evidence ◽  
Iron Sulfide ◽  
Planar Defects ◽  
Selective Area ◽  
Vacancy Ordering ◽  
Different Types ◽  
Lattice Images ◽  
The Subject ◽  
Beam Lattice

It is well known that the large deviations from stoichiometry in iron sulfide compounds, Fe1-xS (0≤x≤0.125), are accommodated by iron vacancies which order and form superstructures at low temperatures. Although the ordering of the iron vacancies has been well established, the modes of vacancy ordering, hence superstructures, as a function of composition and temperature are still the subject of much controversy. This investigation gives direct evidence from many-beam lattice images of Fe1-xS that the 4C superstructure transforms into the 3C superstructure (Fig. 1) rather than the MC phase as previously suggested. Also observed are an intrinsic stacking fault in the sulfur sublattice and two different types of vacancy-ordering antiphase boundaries. Evidence from selective area optical diffractograms suggests that these planar defects complicate the diffraction pattern greatly.

Detection for Particles Moving in Micro Channel with Multifiber Array Sensor

2012 ◽  
Vol 132 (7) ◽  
pp. 203-211 ◽  
Author(s):  
Ichiro Okuda ◽  
Tomohito Takubo ◽  
Yasushi Mae ◽  
Kenichi Ohara ◽  
Fumihito Arai ◽  
...  
Keyword(s):  
Micro Channel ◽  
Array Sensor
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