Very Low-Threshold 1.55-μm Dilute-Nitride Lasers

2006 ◽  
Author(s):  
S. Bank ◽  
H. Bae ◽  
L. Goddard ◽  
H. Yuen ◽  
M. Wistey ◽  
...  
Keyword(s):  
Dilute Nitride ◽  
Low Threshold ◽  
Nitride Lasers

Temperature dependencies of annealing behaviors of GaInNAsSb∕GaNAs quantum wells for long wavelength dilute-nitride lasers

2007 ◽  
Vol 90 (23) ◽  
pp. 231119 ◽  
Author(s):  
Hopil P. Bae ◽  
Seth R. Bank ◽  
Homan B. Yuen ◽  
Tomas Sarmiento ◽  
Evan R. Pickett ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Dilute Nitride ◽  
Long Wavelength ◽  
Nitride Lasers

Recent Progress on 1.55-$\mu{\hbox {m}}$ Dilute-Nitride Lasers

2007 ◽  
Vol 43 (9) ◽  
pp. 773-785 ◽  
Author(s):  
Seth R. Bank ◽  
Hopil Bae ◽  
Lynford L. Goddard ◽  
Homan B. Yuen ◽  
Mark A. Wistey ◽  
...  
Keyword(s):  
Recent Progress ◽  
Dilute Nitride ◽  
Nitride Lasers

Development of dilute nitride materials for mid-infrared diode lasers

2012 ◽  
Vol 27 (9) ◽  
pp. 094009 ◽  
Author(s):  
A Krier ◽  
M de la Mare ◽  
P J Carrington ◽  
M Thompson ◽  
Q Zhuang ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Dilute Nitride ◽  
Mid Infrared

scholarly journals Calculation of the Bandgap of Dilute Nitride GaAsSbN Alloys

2021 ◽  
Vol 1762 (1) ◽  
pp. 012042
Author(s):  
S Georgiev ◽  
V Donchev ◽  
M Milanova
Keyword(s):  
Dilute Nitride

Carrier Dynamics and Defects in Bulk 1eV InGaAsNSb Materials and InGaAs Layers with MBL Grown by MOVPE for Multi-junction Solar Cells

2013 ◽  
Vol 1493 ◽  
pp. 245-251 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Brendan Foran ◽  
William Lotshaw ◽  
Steven C. Moss ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Triple Junction ◽  
Gaas Substrate ◽  
High Performance ◽  
Carrier Dynamics ◽  
Dilute Nitride ◽  
Metamorphic Buffer ◽  
Lattice Matched

ABSTRACTMulti-junction III-V solar cells are based on a triple-junction design that employs a 1eV bottom junction grown on the GaAs substrate with a GaAs middle junction and a lattice-matched InGaP top junction. There are two possible approaches implementing the triple-junction design. The first approach is to utilize lattice-matched dilute nitride materials such as InGaAsN(Sb) and the second approach is to utilize lattice-mismatched InGaAs employing a metamorphic buffer layer (MBL). Both approaches have a potential to achieve high performance triple-junction solar cells. A record efficiency of 43.5% was achieved from multi-junction solar cells using the first approach [1] and the solar cells using the second approach yielded an efficiency of 41.1% [2]. We studied carrier dynamics and defects in bulk 1eV InGaAsNSb materials and InGaAs layers with MBL grown by MOVPE for multi-junction solar cells.

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