Abstract
The strain technology is accelerating the progress on the CMOS compatible Ge-on-Si laser source. Here, we report a monolithically integrated microbridge-based emitting-detecting configuration, equipped with lateral p–i–n junctions, waveguide and gratings. The operating wavelength range of the emitting bridge and the detecting bridge are matched through the designed same dimensions of the two microbridges, as well as the strain. Strain-enhanced spontaneous emission and the effect of spectra red-shifting on low-loss transmission of on-chip light are discussed. Temperature dependence experiments reveal that in devices with highly strain-enhanced structure, the strain variation can offset the effect of electron thermalization, so that the performance of the device remains stable when temperature changes around room temperature.
Monolithic integrated emitting-detecting configuration based on strained Ge microbridge