Broadly tunable optical parametric oscillators with up to 82-GHz pulse repetition rate and very high output power

2005 ◽  
Author(s):  
S. Lecomte ◽  
R. Paschotta ◽  
U. Keller ◽  
S. Pawlik ◽  
B. Schmidt
Keyword(s):  
Output Power ◽  
Repetition Rate ◽  
Pulse Repetition Rate ◽  
Pulse Repetition ◽  
Optical Parametric Oscillators ◽  
High Output Power ◽  
Parametric Oscillators ◽  
Optical Parametric ◽  
Very High ◽  
High Output

scholarly journals Laser-Induced Damage Threshold of Nonlinear GaSe and GaSe:In Crystals upon Exposure to Pulsed Radiation at a Wavelength of 2.1 μm

2021 ◽  
Vol 11 (3) ◽  
pp. 1208
Author(s):  
Chongqiang Zhu ◽  
Victor Dyomin ◽  
Nikolay Yudin ◽  
Oleg Antipov ◽  
Galina Verozubova ◽  
...  
Keyword(s):  
Repetition Rate ◽  
Pulse Repetition Rate ◽  
Peak Power ◽  
Damage Threshold ◽  
Radiation Energy ◽  
Incident Radiation ◽  
Pulse Repetition ◽  
Optical Parametric Oscillators ◽  
Parametric Oscillators ◽  
Laser Induced Damage

The paper defined the laser-induced damage threshold from the fluence and the peak power of GaSe and GaSe:In single crystals upon exposure to nanosecond radiation in the two micron range and assessed the influence of test radiation energy parameters (pulse repetition rate, pulse duration) on the damage threshold. Laser-induced damage threshold was determined with the parameters of the incident radiation close to the pump radiation parameters of promising dual-wavelength optical parametric oscillators (effective pump sources for THz difference frequency oscillators): wavelength was ≈2.1 μm; pulse repetition rates were 10, 12, 14, and 20 kHz; and pulse durations were 15, 18, 20, and 22 ns. The obtained results made it possible to conclude that the value of GaSe damage threshold at a wavelength of 2.091 μm of the incident radiation was influenced by the accumulation effects (the damage threshold decreased as the pulse repetition rate increased). The accumulation effects were more significant in the case of the In-doped sample, since a more significant decrease in the damage threshold was observed with increasing frequency in terms of the peak power and the fluence.

Demonstration of wafer‐level light emitting diode with very high output power

2014 ◽  
Vol 50 (25) ◽  
pp. 1970-1972 ◽  
Author(s):  
Yibin Zhang ◽  
Fei Xu ◽  
Desheng Zhao ◽  
Hongjuan Huang ◽  
Wei Wang ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diode ◽  
High Output Power ◽  
Wafer Level ◽  
Light Emitting ◽  
Very High ◽  
High Output

Compact KTA-Based Optical Parametric Oscillator Driven by a Passively Q-Switched YVO4/Nd:YVO4 Laser

2017 ◽  
Vol 886 ◽  
pp. 81-85
Author(s):  
Fen Bai ◽  
Zhi Yong Jiao ◽  
Xian Feng Xu ◽  
Hui Zhang
Keyword(s):  
Optical Parametric Oscillator ◽  
Repetition Rate ◽  
Output Signal ◽  
Pulse Repetition Rate ◽  
Beam Quality ◽  
Parametric Oscillator ◽  
Pulse Repetition ◽  
Signal Power ◽  
Quality Factors ◽  
Optical Parametric

A compact passively Q-switched YVO4/Nd:YVO4/KTA intracavity optical parametric oscillator (OPO) is realized. With an end-pumping diode power of 16.6 W, output signal power of 932 mW and idler power of 415 mW are obtained at a pulse repetition rate of 101 kHz. The pulse widths and the beam quality factors are also analyzed for both signal and idler lasers.

A sequential discharge TEA CO2 laser with high repetition rate and high output power

1999 ◽  
Vol 31 (5) ◽  
pp. 393-396 ◽  
Author(s):  
Rongqing Tan ◽  
Chongyi Wan ◽  
Jilan Qi ◽  
Shiming Liu ◽  
Jinwen Zhou ◽  
...  
Keyword(s):  
Output Power ◽  
Co2 Laser ◽  
Repetition Rate ◽  
High Repetition Rate ◽  
Tea Co2 Laser ◽  
High Output Power ◽  
High Repetition ◽  
High Output
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