Dependence of L-band amplifier efficiency on pump wavelength and amplifier design

2002 ◽  
Author(s):  
R. di Muro ◽  
P.N. Kean ◽  
S.J. Wilson ◽  
J. Mun
Keyword(s):  
Pump Wavelength ◽  
L Band ◽  
Amplifier Design

scholarly journals Performance Analysis of Flat Gain Wideband Raman Amplifier for S+C and C+L Band DWDM System

2018 ◽  
Vol 2018 ◽  
pp. 1-7
Author(s):  
Dipika D. Pradhan ◽  
Abhilash Mandloi
Keyword(s):  
Pump Power ◽  
Noise Figure ◽  
Excited State Absorption ◽  
Telecommunication Networks ◽  
Raman Amplifier ◽  
Gain Flattening ◽  
L Band ◽  
Flat Gain ◽  
Amplifier Design ◽  
Dwdm System

Raman amplifier is an open area of research in telecommunication field. This paper discusses the performance of 64 channels of 10 Gbps WDM systems with backward multipump Raman amplifier. The main goal of this paper is the optimization of Raman amplifier to minimize its gain variation without using any gain flattening techniques. To increase the transmission capacity of DWDM system, Raman amplifier with backward multipump configuration is implemented. The optimized parameters such as pump power and frequencies are used to deliver both ground and excited state absorption for amplification in S+C and C+L band region. The pump power and frequencies are optimized through multitarget and multiparameter optimization tool available in OptiSystem software. Gain ripple was achieved <0.5 dB for this simulation setup. The maximum flat gain achieved is 8.6 dB and noise figure of <8 dB was achieved for this wide bandwidth without using gain flattening techniques. This amplifier design will be helpful for CATV applications and telecommunication networks.

An extended L-band EDFA using C-band pump wavelength

2020 ◽  
Author(s):  
Chengmin Lei ◽  
Hanlin Feng ◽  
Lixian Wang ◽  
Younès Messaddeq ◽  
Sophie Larochelle
Keyword(s):  
Pump Wavelength ◽  
L Band

A 100 W SiC MESFET Amplifier for L-band T/R Module of APAR

2011 ◽  
Vol 57 (1) ◽  
pp. 135-140 ◽  
Author(s):  
Wojciech Wojtasiak ◽  
Daniel Gryglewski
Keyword(s):  
Output Power ◽  
Design Methodology ◽  
Design Method ◽  
Signal Model ◽  
Temperature Changes ◽  
Dc Characteristics ◽  
Small Signal Model ◽  
L Band ◽  
Amplifier Design ◽  
Operating Points

A 100 W SiC MESFET Amplifier for L-band T/R Module of APAR In the paper, a 100W SiC MESFET amplifier design dedicated for a L-band T/R module of APAR is presented. The output power higher than 100 W has been achieved by combining in a balanced configuration two single stages with Cree's 60 W CRF24060 SiC MESFETs. The amplifier design methodology is based on the small-signal model and DC characteristics of SiC MESFET. The model is extracted using the transistor S-parameters at three operating points for On-state, Off-state and normally biased. The measurements and simulations prove usefulness of the proposed design method. The amplifier was excited with pulsed and cw signals for the case temperature ranging from 60°C to 140°C. As a result of the case temperature changes the output power drop was lower than 0.5 dB at the level of 150 W.

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