In-situ TEM biasing experiments to study thickness-dependent ferroelectric domain switching of Pb(Zr,Ti)O3 films

2011 ◽  
Author(s):  
Gayoung Shin ◽  
Ho-Nyung Lee ◽  
Jiseong Im ◽  
Gil-Ho Gu ◽  
Sang Ho Oh
Keyword(s):  
Domain Switching ◽  
Ferroelectric Domain ◽  
In Situ Tem

scholarly journals Direct observation of ferroelectric domain switching in varying electric field regimes using in situ TEM

Micron ◽  
2012 ◽  
Vol 43 (11) ◽  
pp. 1121-1126 ◽  
Author(s):  
C.R. Winkler ◽  
A.R. Damodaran ◽  
J. Karthik ◽  
L.W. Martin ◽  
M.L. Taheri
Keyword(s):  
Electric Field ◽  
Direct Observation ◽  
Domain Switching ◽  
Ferroelectric Domain ◽  
In Situ Tem

In situ observation of the motion of ferroelectric domain walls in Bi4Ti3O12 single crystals

2016 ◽  
Vol 49 (5) ◽  
pp. 1645-1652 ◽  
Author(s):  
Wanneng Ye ◽  
Lingli Tang ◽  
Chaojing Lu ◽  
Huabing Li ◽  
Yichun Zhou
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Single Crystals ◽  
Transmission Electron Microscope ◽  
Domain Walls ◽  
Domain Switching ◽  
Ferroelectric Domain ◽  
In Situ Observation ◽  
Transmission Electron

Five types of ferroelectric domain walls (DWs) are present in Bi4Ti3O12 single crystals (Ye et al., 2015). Here their motion was investigated in situ using transmission electron microscopy and optical microscopy. The motion of P (a)-90° DWs, P (a)-180° DWs and P (c)-180° DWs was observed through electron beam poling in a transmission electron microscope. The growth of new P s(a)-180° nanodomains was frequently seen and they tended to nucleate at preexisting P s(a)-90° DWs. Irregularly curved P (c)-180° DWs exhibit the highest mobility, while migration over a short range occurs occasionally for faceted P s(a)-90° DWs. In addition, the motion of P s(a)-90° DWs and the growth/annihilation of new needle-like P s(a)-90° domains in a 20 µm-thick crystal were observed under an external electric field on an optical microscope. Most of the new needle-like P s(a)-90° domains nucleate at preexisting P s(a)-90° DWs and the former are much smaller than the latter. This is very similar to the situation for P s(a)-180° domain switching induced by electron beam poling in a transmission electron microscope. Our observations suggest the energy hierarchy for different domains of P s(c)-180° ≤ P s(a)-180° ≤ P s(a)-90° ≤ new needle-like P s(a)-90° in ferroelectric Bi4Ti3O12.

Displacement Charge Patterns and Ferroelectric Domain Wall Dynamics Studied by In-Situ Tem

1999 ◽  
Vol 596 ◽  
Author(s):  
A. Krishnan ◽  
M. M. J. Treacy ◽  
M. E. Bisher ◽  
P. Chandra ◽  
P. B. Littlewood
Keyword(s):  
Electric Fields ◽  
Domain Walls ◽  
Energy State ◽  
Ferroelectric Domain ◽  
Potassium Niobate ◽  
In Situ Tem ◽  
Domain Wall Dynamics ◽  
Transmission Electron ◽  
Energy Domain

AbstractWe have observed the growth of domains in ferroelectric barium titanate and potassium niobate using a transmission electron microscope. When domains move in response to electric fields we see a scaling effect where the fine scale domain structure is activated first, followed by larger length-scale patterns. Curvature and tilting of domain walls leads to local uncompensated displacement charge and external fields can interact with these charged walls. In this paper, we posit that the presence of displacement charge on domain walls is important for polarization switching. Charge-neutral domain configurations are in a lower energy state and are harder to switch. We argue that the number of charge-neutral, low energy domain configurations can increase with time. This mechanism provides an intrinsic contribution to ferroelectric fatigue.

Direct Observation of Ferroelectric Domain Switching of BaTiO3 Using In-Situ Transmission Electron Microscopy

2016 ◽  
Vol 8 (12) ◽  
pp. 2281-2285 ◽  
Author(s):  
Kuy-Jin Jo ◽  
Byeong-Seon An ◽  
Tae-Hoon Kim ◽  
Hyun-Woo Cha ◽  
Jin-Su Oh ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Direct Observation ◽  
Domain Switching ◽  
Ferroelectric Domain ◽  
Transmission Electron

In-situ TEM study of domain switching in GaN thin films

2017 ◽  
Vol 111 (11) ◽  
pp. 113103
Author(s):  
Baoming Wang ◽  
Tun Wang ◽  
Aman Haque ◽  
Michael Snure ◽  
Eric Heller ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Switching ◽  
In Situ Tem

In situ TEM studies of irradiation effects for materials improvement

1991 ◽  
Vol 49 ◽  
pp. 452-453
Author(s):  
Charles W. Allen
Keyword(s):  
Nuclear Reactor ◽  
Austenitic Stainless Steels ◽  
High Energy ◽  
Point Of View ◽  
In Situ Tem ◽  
Irradiation Effects ◽  
Tem Analysis ◽  
Radiation Induced ◽  
Analytical Tools

Irradiation effects studies employing TEMs as analytical tools have been conducted for almost as many years as materials people have done TEM, motivated largely by materials needs for nuclear reactor development. Such studies have focussed on the behavior both of nuclear fuels and of materials for other reactor components which are subjected to radiation-induced degradation. Especially in the 1950s and 60s, post-irradiation TEM analysis may have been coupled to in situ (in reactor or in pile) experiments (e.g., irradiation-induced creep experiments of austenitic stainless steels). Although necessary from a technological point of view, such experiments are difficult to instrument (measure strain dynamically, e.g.) and control (temperature, e.g.) and require months or even years to perform in a nuclear reactor or in a spallation neutron source. Consequently, methods were sought for simulation of neutroninduced radiation damage of materials, the simulations employing other forms of radiation; in the case of metals and alloys, high energy electrons and high energy ions.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

In situ TEM Studies of agglomeration of sub-nanometer Ru layers in Ru/C multilayers

1992 ◽  
Vol 50 (1) ◽  
pp. 256-257
Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright
Keyword(s):  
Layered Structure ◽  
Driving Force ◽  
High Energy ◽  
Superior Performance ◽  
In Situ Tem ◽  
Rayleigh Instability ◽  
Practical Applications ◽  
Transmission Electron ◽  
Diffraction Patterns

Nanometer period Ru/C multilayers are one of the prime candidates for normal incident reflecting mirrors at wavelengths < 10 nm. Superior performance, which requires uniform layers and smooth interfaces, and high stability of the layered structure under thermal loadings are some of the demands in practical applications. Previous studies however show that the Ru layers in the 2 nm period Ru/C multilayer agglomerate upon moderate annealing, and the layered structure is no longer retained. This agglomeration and crystallization of the Ru layers upon annealing to form almost spherical crystallites is a result of the reduction of surface or interfacial energy from die amorphous high energy non-equilibrium state of the as-prepared sample dirough diffusive arrangements of the atoms. Proposed models for mechanism of thin film agglomeration include one analogous to Rayleigh instability, and grain boundary grooving in polycrystalline films. These models however are not necessarily appropriate to explain for the agglomeration in the sub-nanometer amorphous Ru layers in Ru/C multilayers. The Ru-C phase diagram shows a wide miscible gap, which indicates the preference of phase separation between these two materials and provides an additional driving force for agglomeration. In this paper, we study the evolution of the microstructures and layered structure via in-situ Transmission Electron Microscopy (TEM), and attempt to determine the order of occurence of agglomeration and crystallization in the Ru layers by observing the diffraction patterns.

In situ TEM observations of melting in nanosized eutectic Pb-Cd inclusions embedded in Al

1996 ◽  
Vol 54 ◽  
pp. 986-987
Author(s):  
S. Hagège ◽  
U. Dahmen ◽  
E. Johnson ◽  
A. Johansen ◽  
V.S. Tuboltsev
Keyword(s):  
Electron Microscope ◽  
Melt Spinning ◽  
Ternary Alloys ◽  
Solid Matrix ◽  
Eutectic System ◽  
In Situ Tem ◽  
In Situ Observation ◽  
Orientation Relationships ◽  
Transmission Electron

Small particles of a low-melting phase embedded in a solid matrix with a higher melting point offer the possibility of studying the mechanisms of melting and solidification directly by in-situ observation in a transmission electron microscope. Previous studies of Pb, Cd and other low-melting inclusions embedded in an Al matrix have shown well-defined orientation relationships, strongly faceted shapes, and an unusual size-dependent superheating before melting.[e.g. 1,2].In the present study we have examined the shapes and thermal behavior of eutectic Pb-Cd inclusions in Al. Pb and Cd form a simple eutectic system with each other, but both elements are insoluble in solid Al. Ternary alloys of Al (Pb,Cd) were prepared from high purity elements by melt spinning or by sequential ion implantation of the two alloying additions to achieve a total alloying addition of up to lat%. TEM observations were made using a heating stage in a 200kV electron microscope equipped with a video system for recording dynamic behavior.

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