On Making Transactional Applications Resilient to Data Corruption Faults

Association Rule Mining Based Algorithm for Recovery of Silent Data Corruption in Convolutional Neural Network Data Storage

2020 IEEE Symposium Series on Computational Intelligence (SSCI) ◽

10.1109/ssci47803.2020.9308545 ◽

2020 ◽

Author(s):

Mohammadreza Ramzanpour ◽

Simone A. Ludwig

Keyword(s):

Neural Network ◽

Convolutional Neural Network ◽

Data Storage ◽

Association Rule ◽

Association Rule Mining ◽

Network Data ◽

Rule Mining ◽

Data Corruption

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Evaluating and reducing the effect of data corruption when applying bag of words approaches to medical records

International Journal of Medical Informatics ◽

10.1016/s1386-5056(02)00057-6 ◽

2002 ◽

Vol 67 (1-3) ◽

pp. 75-83 ◽

Cited By ~ 16

Author(s):

P Ruch ◽

R Baud ◽

A Geissbühler

Keyword(s):

Medical Records ◽

Bag Of Words ◽

Data Corruption

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Data corruption

BMJ ◽

10.1136/bmj.292.6519.555 ◽

1986 ◽

Vol 292 (6519) ◽

pp. 555-555 ◽

Cited By ~ 1

Author(s):

J. R Whittington

Keyword(s):

Data Corruption

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Dealing with Data Corruption in Remote Sensing

Lecture Notes in Computer Science - Advances in Intelligent Data Analysis VI ◽

10.1007/11552253_41 ◽

2005 ◽

pp. 452-463 ◽

Cited By ~ 6

Author(s):

Choh Man Teng

Keyword(s):

Remote Sensing ◽

Data Corruption

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Effects of x-ray exposure on NOR and NAND flash memories during high-resolution 2D and 3D x-ray inspection

International Symposium on Microelectronics ◽

10.4071/isom-2016-thp53 ◽

2016 ◽

Vol 2016 (1) ◽

pp. 000660-000665

Author(s):

Anju Sharma ◽

Preeth Sivakumar ◽

Andrew Feigel ◽

In Tae Bae ◽

Lawrence P. Lehman ◽

...

Keyword(s):

Exposure Time ◽

Flash Memory ◽

Low Energy ◽

Memory Devices ◽

Nand Flash ◽

Flash Memories ◽

Tube Voltage ◽

X Ray ◽

Data Corruption ◽

Tube Current

Abstract In this paper, we present a detailed study on the effects of x-ray exposure on data corruption in commercially available NOR and NAND flash memory devices during x-ray inspection with a high-resolution Phoenix Nanomex system from GE. We investigated role of the x-ray tube voltage, tube current, device orientation, x-ray filters and photon energy. We explored the low exposure regime in detail when the first byte errors start occurring and also determined the absorbed dose for 100% byte errors. No data corruption was observed after the normal 2D x-ray inspection and CT scans of the NOR and NAND flash memory devices under study. However, increase in the tube voltage, tube current and/or the x-ray beam size resulted in byte errors which increased exponentially with the exposure time. The byte error rate was found to be much more sensitive to the tube voltage than the tube current. It was also affected by the device orientation with respect to the x-ray beam. The NAND flash memories were found to be more susceptible to data corruption from x-ray exposure than the NOR devices examined in this work. Some NOR devices were irradiated with the monochromatic x-rays from the CHESS synchrotron facility at Cornell University. Of all the photon energies used in this study, 12 keV x-ray irradiation resulted in the highest byte error rate. In this paper, we thus present a direct proof that it is the low-energy photon absorption that plays a major role in introducing bit errors in flash memories. Commonly available low-energy x-ray filters such as Cu and Al foils were found to be effective in preventing data corruption in such devices for long exposure time. Use of lower tube voltage, lower tube current, smaller x-ray spot size, short exposure time and low-energy x-ray filters, is recommended to prevent data corruption during 2D and 3D x-ray inspection of flash memory devices and other semiconductor devices in general.

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