Controlled Growth of Zinc Oxide Nanorod Array in Aqueous Solution by Zinc Oxide Sol-Gel Thin Film in Relation to Growth Rate and Optical Property

2008 ◽  
Author(s):  
Jing-Shun Huang ◽  
Ching-Fuh Lin
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Growth Rate ◽  
Zinc Oxide ◽  
Optical Property ◽  
Sol Gel ◽  
Nanorod Array ◽  
Controlled Growth

scholarly journals Microstructure Evolution of Ag/TiO2 Thin Film

2021 ◽  
Vol 7 (1) ◽  
pp. 14
Author(s):  
Dewi Suriyani Che Halin ◽  
Kamrosni Abdul Razak ◽  
Mohd Arif Anuar Mohd Salleh ◽  
Mohd Izrul Izwan Ramli ◽  
Mohd Mustafa Al Bakri Abdullah ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Growth Rate ◽  
Synchrotron Radiation ◽  
Tio2 Thin Film ◽  
Sol Gel ◽  
Tio2 Thin Films ◽  
Contact Mode ◽  
X Ray ◽  
Radiation Imaging

Ag/TiO2 thin films were prepared using the sol-gel spin coating method. The microstructural growth behaviors of the prepared Ag/TiO2 thin films were elucidated using real-time synchrotron radiation imaging, its structure was determined using grazing incidence X-ray diffraction (GIXRD), its morphology was imaged using the field emission scanning electron microscopy (FESEM), and its surface topography was examined using the atomic force microscope (AFM) in contact mode. The cubical shape was detected and identified as Ag, while the anatase, TiO2 thin film resembled a porous ring-like structure. It was found that each ring that coalesced and formed channels occurred at a low annealing temperature of 280 °C. The energy dispersive X-ray (EDX) result revealed a small amount of Ag presence in the Ag/TiO2 thin films. From the in-situ synchrotron radiation imaging, it was observed that as the annealing time increased, the growth of Ag/TiO2 also increased in terms of area and the number of junctions. The growth rate of Ag/TiO2 at 600 s was 47.26 µm2/s, and after 1200 s it decreased to 11.50 µm2/s and 11.55 µm2/s at 1800 s. Prolonged annealing will further decrease the growth rate to 5.94 µm2/s, 4.12 µm2/s and 4.86 µm2/s at 2400 s, 3000 s and 3600 s, respectively.

A Solution Processed ZnO Thin Film

2012 ◽  
Vol 239-240 ◽  
pp. 1585-1588 ◽  
Author(s):  
Yuh Chung Hu ◽  
David T.W. Lin ◽  
Hai Lin Lee ◽  
Pei Zen Chang
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Zinc Oxide ◽  
Low Cost ◽  
Zinc Acetate Dihydrate ◽  
Oxide Thin Film ◽  
Zno Thin Film ◽  
Acetate Dihydrate ◽  
Zinc Oxide Thin Film ◽  
Environmentally Friendly Process

The effect of Zinc-Oxide (ZnO) thin film annealed in different ambiences is presented. To achieve low cost and environmentally friendly process, ZnO aqueous solution is synthesized by dissolving zinc acetate dihydrate in deionized water directly. Zinc oxide aqueous solution of high solubility and stability is presented. High quality and dense Zinc oxide thin film is formed by spin coating. Annealing temperatures are in the range of 300 °C~500 °C, and annealing ambiences of both air and N2 are discussed.

Ambient Energy Harvesting of Piezoelectric ZnO Thin Film Dependence of Spin Speed and Annealing Temperature

2020 ◽  
Vol 981 ◽  
pp. 51-58
Author(s):  
Agus Geter Edy Sutjipto ◽  
Yit Pei Shian ◽  
Ali Shaitir ◽  
Mohamad Ashry Jusoh ◽  
Ari Legowo
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Energy Harvesting ◽  
Band Gap ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Zno Film ◽  
Zinc Oxide Thin Film ◽  
Spin Speed

This research deals with ambient energy harvesting by using zinc oxide thin film. The objectives of this thesis are to prove the ZnO film as a piezoelectric material can produce electric when vibration is applied and determine its optimal voltage. The thesis describes the sol gel spin coating technique to fabricate zinc oxide thin film. Zinc acetate dehydrate, absolute ethanol and diethanolamine were used in this thesis to act as sol gel precursor. Sol gel was coated on glass slide which wrapped by aluminum foil. The thin film was formed after preheating and annealing. The thin film was characterized by X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), Photoluminescence spectroscopy (PL) and Ultraviolet-visible spectroscopy (UV-Vis) as well as analyzed using vibration technique. From XRD results, the films were preferentially diffracted at around 65° which corresponding to (1 1 2) diffraction phase. From FESEM results, it was observed that when the spin speed was increased at same annealing temperature, the thickness was also decreased. When the annealing temperature was increased at same spin speed, both grain size and thickness were increased. From the PL results, there was only film with spin speed of 2000 rpm and annealing temperature of 300 °C had slightly left wavelength which was 380 nm. Annealing temperature would affect only the intensity of PL wavelength. From the results of UV-Vis, it was observed that when the spin speed was increased at same annealing temperature, the band gap was decreased. When the annealing temperature was increased at same spin speed, the band gap was decreased. Piezoelectric test had proven the ZnO film could produce electricity. The maximum voltage (20.7 mV) was produced by the ZnO film with spin speed of 2000 rpm and annealing temperature of 300 °C.

Nanostructured Zinc Oxide Thin Film Based Humidity Sensor Prepared by Sol-Gel Immersion Technique

2013 ◽  
Vol 667 ◽  
pp. 553-557 ◽  
Author(s):  
M. Awalludin ◽  
Mohamad Hafiz Mamat ◽  
Mohd Zainizan Sahdan ◽  
Z. Mohamad ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Immersion Time ◽  
Humidity Sensor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Nanostructured Zinc Oxide ◽  
Time Scanning ◽  
Immersion Technique ◽  
Intensity Increment

This paper focus on nanostructured Zinc Oxide (ZnO) thin film based humidity sensor prepared using sol-gel method immersion technique at different immersion time. Scanning Electron Microscopy (SEM) investigations reveal nanorods ZnO were deposited on glass substrate with nanorods length increased with immersion time. All fabricated sensors show current intensity increment response when relative humidity is increased. Sensor fabricated at 16 hr immersion time shows the highest sensitivity in this study.

Fabrication and characterization of sol-gel-derived zinc oxide thin-film transistor

2010 ◽  
Vol 25 (4) ◽  
pp. 695-700 ◽  
Author(s):  
Young Hwan Hwang ◽  
Seok-Jun Seo ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Cost ◽  
Sol Gel ◽  
Solution Process ◽  
Precursor Solution ◽  
Solution Concentration ◽  
Oxide Thin Film ◽  
Zno Films ◽  
Electron Conduction

Thin-film transistors (TFTs) with zinc oxide channel layers were fabricated through a simple and low-cost solution process. Precursor solution concentration, annealing temperature, and the process were controlled for the purpose of improving the electrical properties of ZnO TFTs and analyzed in terms of microstructural scope. The fabricated ZnO films show preferential orientation of the (002) plane, which contributes to enhanced electron conduction and a dense surface. The results show that the TFT characteristics of the film are clearly affected by the microstructure. The optimized TFT operates in a depletion mode, shows n-type semiconductor behavior, and is highly transparent (>90%) within the visible light range. It exhibits a channel mobility of 9.4 cm2/V·s, a subthreshold slope of 3.3 V/decade, and an on-to-off current ratio greater than 105. In addition, the result of N2 annealing shows the possibility of improvement in electrical property of the ZnO TFTs.

Performance of Ultraviolet Photoconductive Sensor Based on Aluminium-Doped Zinc Oxide Nanorod-Nanoflake Network Thin Film Using Aluminium Contacts

2013 ◽  
Vol 832 ◽  
pp. 298-302 ◽  
Author(s):  
M.H. Mamat ◽  
Nor Diyana Md Sin ◽  
I. Saurdi ◽  
N.N. Hafizah ◽  
Mohd Firdaus Malek ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Seed Layer ◽  
Uv Light ◽  
Sol Gel ◽  
Zno Nanorod ◽  
Immersion Method ◽  
Coated Glass Substrate ◽  
Sensor Applications ◽  
Doped Zno

In this research, we fabricated UV photoconductive sensor using aluminium (Al)-doped ZnO nanorod-nanoflake network thin film. These nanostructures were deposited on the seed-layer-coated glass substrate using sonicated sol-gel immersion method. By using Al contacts, it was found that the performance of the UV photoconductive sensor is very good. The responsivity of the device was 46.4 mA/W with sensitivity of 17.5 under 365-nm UV light (5 mW/cm2) at bias voltage of 10 V. Our study revealed that these nanostructures are very promising material for the UV photoconductive sensor applications.

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