In situ microwave characterization of insulator thin films for interconnects of advanced circuits

Author(s):  
B. Flichet ◽  
C. Bermond ◽  
P. Ferrari ◽  
G. Angenieux
2004 ◽  
Vol 1 (12) ◽  
pp. 3744-3747 ◽  
Author(s):  
C. Nader ◽  
T. Boudiar ◽  
B. Bayard ◽  
A. Siblini ◽  
G. Noyel

2018 ◽  
Vol 24 (S1) ◽  
pp. 1900-1901
Author(s):  
B. D. Esser ◽  
A. S. Ahmed ◽  
K. Meng ◽  
J. Rowland ◽  
M. Randeria ◽  
...  

2012 ◽  
Vol 544 ◽  
pp. 34-38 ◽  
Author(s):  
T. Hosokai ◽  
A. Hinderhofer ◽  
A. Vorobiev ◽  
C. Lorch ◽  
T. Watanabe ◽  
...  

2003 ◽  
Vol 55 (1) ◽  
pp. 939-946 ◽  
Author(s):  
Y. L. Cheng ◽  
N. Chong ◽  
Y. Wang ◽  
J. Z. Liu ◽  
H. L. W. Chan ◽  
...  

1992 ◽  
Vol 247 ◽  
Author(s):  
F. Jousse ◽  
P. Hourquebie ◽  
C. Deleuze ◽  
L. Olmedo

ABSTRACT.: Thermoplastic blends have been created by in situ growth of polypyrrole in an insulating PVC matrix. This type of synthesis gives a level of conductivity of the order of 10−5 to 1 S/cm for concentrations of less than 15% (in weight). A study of the synthetic conditions shows that the reaction parameters (solvent, nature of oxidizing agent) control the eventual properties of the blend (structure, conductivity level). The microwave characterization of these materials has allowed us to establish a direct link between the method of processing and the radioelectric properties.


1993 ◽  
Vol 24 (4) ◽  
pp. 389-393
Author(s):  
B. Balland ◽  
R. Botton ◽  
M. Lemiti ◽  
J.C. Bureau ◽  
A. Glachant

2007 ◽  
Vol 40 (2) ◽  
pp. 332-337 ◽  
Author(s):  
R. Guinebretière ◽  
A. Boulle ◽  
R. Bachelet ◽  
O. Masson ◽  
P. Thomas

A laboratory X-ray diffractometer devoted to thein situcharacterization of the microstructure of epitaxic thin films at temperatures up to 1500 K has been developed. The sample holder was built using refractory materials, and a high-accuracy translation stage allows correction of the dilatation of both the sample and the sample holder. The samples are oriented with respect to the primary beam with two orthogonal rotations allowing the registration of symmetric as well as asymmetric reciprocal space maps (RSMs). The association of a monochromatic primary beam and a position-sensitive detector allows the measurement of RSMs in a few minutes for single crystals and in a few hours for imperfect epitaxic thin films. A detailed description of the setup is given and its potential is illustrated by high-temperature RSM experiments performed on yttria-doped zirconia epitaxic thin films grown on sapphire substrates.


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