Microwave spectrum analyzer based on spectral hole burning

Author(s):  
L. Menager ◽  
I. Lorgere ◽  
J.-L. Le Gouet ◽  
D. Dolfi ◽  
J.-P. Huignard
2018 ◽  
Vol 26 (6) ◽  
pp. 6674
Author(s):  
Guofang Fan ◽  
Yuan Li ◽  
Chunguang Hu ◽  
Jiasi Wei ◽  
Hongyu Li

2001 ◽  
Vol 26 (16) ◽  
pp. 1245 ◽  
Author(s):  
Loïc Ménager ◽  
Ivan Lorgeré ◽  
Jean-Louis Le Gouët ◽  
Daniel Dolfi ◽  
Jean-Pierre Huignard

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.


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