1.55 μm absorption, high speed, high saturation power p-i-n photodetectors using low-temperature grown GaAs

2002 ◽  
Author(s):  
Y.J. Chiu ◽  
S.Z. Zhang ◽  
J.E. Bowers ◽  
U.K. Mishra
Keyword(s):  
Low Temperature ◽  
High Speed ◽  
High Saturation ◽  
Saturation Power ◽  
Low Temperature Grown Gaas

GaAs-based, 1.55 [micro sign]m high speed, high saturation power, low-temperature grown GaAs pin photodetector

1998 ◽  
Vol 34 (12) ◽  
pp. 1253 ◽  
Author(s):  
Yi-Jen Chiu ◽  
S.Z. Zhang ◽  
S.B. Fleischer ◽  
J.E. Bowers ◽  
U.K. Mishra
Keyword(s):  
Low Temperature ◽  
High Speed ◽  
High Saturation ◽  
Saturation Power ◽  
Low Temperature Grown Gaas

High-speed low-temperature-grown GaAs p-i-n traveling-wave photodetector

1998 ◽  
Vol 10 (7) ◽  
pp. 1012-1014 ◽  
Author(s):  
Yi-Jen Chiu ◽  
S.B. Fleischer ◽  
J.E. Bowers
Keyword(s):  
Low Temperature ◽  
Traveling Wave ◽  
High Speed ◽  
Low Temperature Grown Gaas

scholarly journals High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p–i–n photodiodes

2004 ◽  
Vol 84 (21) ◽  
pp. 4185-4187 ◽  
Author(s):  
B. Butun ◽  
N. Biyikli ◽  
I. Kimukin ◽  
O. Aytur ◽  
E. Ozbay ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Speed ◽  
Resonant Cavity ◽  
Low Temperature Grown Gaas

High-speed high-responsivity low temperature grown GaAs detector

2012 ◽  
Author(s):  
Marc Currie ◽  
Pouya Dianat ◽  
Anna Persano ◽  
Adriano Cola ◽  
Concetta Martucci ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Speed ◽  
High Responsivity ◽  
Low Temperature Grown Gaas

Thick Absorption Layer Uni-Traveling-Carrier Photodiodes With High Responsivity, High Speed, and High Saturation Power

2009 ◽  
Vol 21 (7) ◽  
pp. 429-431 ◽  
Author(s):  
M. Chtioui ◽  
D. Carpentier ◽  
S. Bernard ◽  
B. Rousseau ◽  
F. Lelarge ◽  
...  
Keyword(s):  
High Speed ◽  
High Responsivity ◽  
Absorption Layer ◽  
High Saturation ◽  
Saturation Power
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