Leakage current-based testing of CMOS ICs

2004 ◽  
Vol 23 (2) ◽  
pp. 28-32
Author(s):  
S. Sabade
Keyword(s):  
Leakage Current ◽  
Current Based Testing

TMR Magnetic Sensor Array Module for Detecting Leakage Current in Lithium-ion Batteries

2017 ◽  
Vol 137 (8) ◽  
pp. 481-486
Author(s):  
Junichi Hayasaka ◽  
Kiwamu Shirakawa ◽  
Nobukiyo Kobayashi ◽  
Kenichi Arai ◽  
Nobuaki Otake ◽  
...  
Keyword(s):  
Lithium Ion Batteries ◽  
Leakage Current ◽  
Sensor Array ◽  
Lithium Ion ◽  
Magnetic Sensor

Relationship between Leakage Current and Pollution Deposits on the Surface of Polymeric Insulator

2010 ◽  
Vol 130 (11) ◽  
pp. 1037-1041 ◽  
Author(s):  
Takuma Miyake ◽  
Yuya Seo ◽  
Tatsuya Sakoda ◽  
Masahisa Otsubo
Keyword(s):  
Leakage Current

Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress

2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky
Keyword(s):  
Leakage Current ◽  
Electrical Performance ◽  
Constant Current ◽  
Continuous Increase ◽  
Current Stress ◽  
Thermal Oxide ◽  
Stress Induced Leakage Current ◽  
Boron Penetration ◽  
Soft Breakdown ◽  
Induced Defects

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.

Circuit Voltage Probe Based on Time-Integrated Measurements of Optical Emission From Leakage Current

2002 ◽  
Author(s):  
Franco Stellari ◽  
Peilin Song ◽  
James C. Tsang ◽  
Moyra K. McManus ◽  
Mark B. Ketchen
Keyword(s):  
Leakage Current ◽  
Voltage Drop ◽  
Optical Emission ◽  
Channel Length ◽  
Operating Conditions ◽  
Power Circuit ◽  
Hot Carrier ◽  
Optical Inspection ◽  
Low Threshold ◽  
Circuit Power

Abstract Hot-carrier luminescence emission is used to diagnose the cause of excess quiescence current, IDDQ, in a low power circuit implemented in CMOS 7SF technology. We found by optical inspection of the chip that the high IDDQ is related to the low threshold, Vt, device process and in particular to transistors with minimum channel length (0.18 μm). In this paper we will also show that it is possible to gain knowledge regarding the operating conditions of the IC from the analysis of optical emission due to leakage current, aside from simply locating defects and failures. In particular, we will show how it is possible to calculate the voltage drop across the circuit power grid from time-integrated acquisitions of leakage luminescence.

Failure Analysis Due to Slightly Unetched Hard Mask Using Nano Probe

2013 ◽  
Author(s):  
Jong Hak Lee ◽  
Jong Eun Kim ◽  
Chang Su Park ◽  
Nam Il Kim ◽  
Jang Won Moon ◽  
...  
Keyword(s):  
Leakage Current ◽  
Circuit Simulation ◽  
The State ◽  
Physical Analysis ◽  
Cross Sectional ◽  
Hard Mask ◽  
Current Flows ◽  
Voltage Contrast ◽  
The One ◽  
Zero Voltage

Abstract In this work, a slightly unetched gate hard mask failure was analyzed by nano probing. Although unetched hard mask failures are commonly detected from the cross sectional view with FIB or FIB-TEM and planar view with the voltage contrast, in this case of the very slightly unetched hard mask, it was difficult to find the defects within the failed area by physical analysis methods. FIB is useful due to its function of milling and checking from the one region to another region within the suspected area, but the defect, located under contact was very tiny. So, it could not be detected in the tilted-view of the FIB. However, the state of the failure could be understood from the electrical analysis using a nano probe due to its ability to probe contact nodes across the fail area. Among the transistors in the fail area, one transistor’s characteristics showed higher leakage current and lower ON current than expected. After physical analysis, slightly remained hard mask was detected by TEM. Chemical processing was followed to determine the gate electrode (WSi2) connection to tungsten contact. It was also proven that when gate is floated, more leakage current flows compared to the state that the zero voltage is applied to the gate. This was not verified by circuit simulation due to the floating nodes.

Numerical Simulation of Leakage Current on Conductive Insulator Surface

2019 ◽  
Vol 8 (4) ◽  
pp. 9487-9492
Keyword(s):  
Numerical Simulation ◽  
Electric Field ◽  
Leakage Current ◽  
Method Of Lines ◽  
Electron Attachment ◽  
Negative Ions ◽  
Conduction Current ◽  
Insulator Surface ◽  
Finite Difference Approximations ◽  
Positive Ions

The outdoor insulator is commonly exposed to environmental pollution. The presence of water like raindrops and dew on the contaminant surface can lead to surface degradation due to leakage current. However, the physical process of this phenomenon is not well understood. Hence, in this study we develop a mathematical model of leakage current on the outdoor insulator surface using the Nernst Planck theory which accounts for the charge transport between the electrodes (negative and positive electrode) and charge generation mechanism. Meanwhile the electric field obeys Poisson’s equation. Method of Lines technique is used to solve the model numerically in which it converts the PDE into a system of ODEs by Finite Difference Approximations. The numerical simulation compares reasonably well with the experimental conduction current. The findings from the simulation shows that the conduction current is affected by the electric field distribution and charge concentration. The rise of the conduction current is due to the distribution of positive ion while the dominancy of electron attachment with neutral molecule and recombination with positive ions has caused a significant reduction of electron and increment of negative ions.

Leakage Current Reduction of Ni-MILC Poly-Si TFT Using Chemical Cleaning Method

2018 ◽  
Vol 28 (8) ◽  
pp. 440-444
Author(s):  
Kwang-Jin Lee ◽  
◽  
Doyeon Kim ◽  
Duck-Kyun Choi ◽  
Woo-Byoung Kim
Keyword(s):  
Leakage Current ◽  
Chemical Cleaning ◽  
Cleaning Method ◽  
Current Reduction

Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs

2017 ◽  
Vol 9 (6) ◽  
pp. 06009-1-06009-4 ◽  
Author(s):  
Nitin Sachdeva ◽  
◽  
Munish Vashishath ◽  
P. K. Bansal ◽  
◽  
...  
Keyword(s):  
Leakage Current ◽  
Analytical Modeling ◽  
Modeling Simulation
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