scholarly journals Early-time turn-on characteristics of a high current thyristor

2002 ◽  
Author(s):  
L.D. Roose ◽  
G.J. Rohwein
Keyword(s):  
Early Time ◽  
High Current ◽  
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High Voltage Insulated Gate Trigger Thyristor With High-Efficiency Injection for Fast Turn-on and High Current Pulse

2019 ◽  
Vol 40 (12) ◽  
pp. 1965-1968 ◽  
Author(s):  
Chao Liu ◽  
Wanjun Chen ◽  
Ruize Sun ◽  
Yijun Shi ◽  
Qi Zhou ◽  
...  
Keyword(s):  
Current Pulse ◽  
High Voltage ◽  
High Efficiency ◽  
High Current ◽  
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Inducing the trap-site in an emitting-layer for an organic upconversion device exhibiting high current-gain ratio and low turn-on voltage

2016 ◽  
Vol 30 ◽  
pp. 275-280 ◽  
Author(s):  
Shun-Wei Liu ◽  
Ya-Ze Li ◽  
Shao-Yu Lin ◽  
Yi-Hua Li ◽  
Chih-Chien Lee
Keyword(s):  
Current Gain ◽  
High Current ◽  
Trap Site ◽  
Gain Ratio ◽  
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A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules

2006 ◽  
Vol 527-529 ◽  
pp. 1397-1400 ◽  
Author(s):  
Anant K. Agarwal ◽  
Sumi Krishnaswami ◽  
Ben Damsky ◽  
Jim Richmond ◽  
Craig Capell ◽  
...  
Keyword(s):  
Rise Time ◽  
High Current ◽  
Cathode Voltage ◽  
Strong Function ◽  
Gate Current ◽  
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Cathode Current

We report on the development of the first 1 cm x 1 cm SiC Thyristor chip capable of blocking 5 kV. This demonstrates the present quality of the SiC substrate and epitaxial material. A forward drop of 4.1 V at 100 A and 25°C has been measured. The turn-on delay is found to be a strong function of the gate current. At a gate current of 0.5 A, a turn-on delay of 250 ns is observed for an anode to cathode current of 200 A. The turn-on delay reduces to 72 ns for an IG = 1.5 A. The turn-on rise time is a strong function of the anode to cathode voltage, VAK. At VAK =230 V, the turn-on rise-time is 300 ns for IAK =200 A. The rise-time reduces to 26 ns for VAK = 500 V.

High current density and low turn-on field from aligned Cd(OH)2 nanosheets

2016 ◽  
Vol 650 ◽  
pp. 7-10 ◽  
Author(s):  
Vivekanand S. Bagal ◽  
Girish P. Patil ◽  
Amol B. Deore ◽  
Prashant K. Baviskar ◽  
Sachin R. Suryawanshi ◽  
...  
Keyword(s):  
Current Density ◽  
High Current Density ◽  
High Current ◽  
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Highly efficient and low voltage silver nanowire-based OLEDs employing a n-type hole injection layer

Nanoscale ◽  
2014 ◽  
Vol 6 (15) ◽  
pp. 8565-8570 ◽  
Author(s):  
Hyungjin Lee ◽  
Donghwa Lee ◽  
Yumi Ahn ◽  
Eun-Woo Lee ◽  
Lee Soon Park ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Low Voltage ◽  
Silver Nanowire ◽  
Organic Light Emitting Diodes ◽  
Hole Injection ◽  
High Current ◽  
Light Emitting ◽  
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Organic Light ◽  
Transparent Conducting

The organic light-emitting diodes with an AgNW transparent conducting electrode exhibit remarkable mechanical flexibility and excellent device characteristics such as very low turn-on voltage and extremely high current and power efficiencies.

Spatial dynamics of high current turn-on in low-voltage AlGaAs/GaAs phototransistors

2016 ◽  
Vol 119 (12) ◽  
pp. 124513 ◽  
Author(s):  
S. O. Slipchenko ◽  
A. A. Podoskin ◽  
O. S. Soboleva ◽  
N. A. Pikhtin ◽  
T. A. Bagaev ◽  
...  
Keyword(s):  
Low Voltage ◽  
Spatial Dynamics ◽  
High Current ◽  
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